NTE641 Search Results

applications of ujt

Abstract: ujt transistor UJT APPLICATION applications of ujt with circuits NTE6410 ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download
Contextual Info: NTE6410 Unijunction Transistor UJT Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified)

NTE6412

Abstract: NTE6407 NTE6408 NTE6411 DO35 VBO24
Contextual Info: NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes DIACS Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity

Contextual Info: NTE6412 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)56 V(BO) Max. (V)70 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

50Hz sine wave generator

Abstract: 50hz sine generator xenon ignitor sidac ignitor xenon DIACS xenon lamp igniter NTE6416 NTE6419 Sine Wave Generator
Contextual Info: NTE6415 thru NTE6419 Bidirectional Thyristor Diodes SIDAC Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding

Contextual Info: NTE6411 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)35 V(BO) Max. (V)45 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)

diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation

NTE7232

Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Contextual Info: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case

NTE4017B

Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

NTE6405

Abstract: triac diac applications circuit diagram
Contextual Info: SILICON ASYMMETRICAL AC TRIGGER SAS N T E Type N u m ber C a se Style Diagram N um ber S w itc h in g V oltag es (Volts) Vs2 V S1 T098 6405 386 M in M ax M in M ax 14 18 7 9 Sw itch in g C urre n t <mA> Forw ard Voltage Drop (Volts) O ff-S ta te Current

nte 6408

Contextual Info: SPECIAL DEVICES SILICON UNILATERAL SWITCH SUS NTE Type Number 6404 Case Style T098 Diagram Number 5 Forward Switching Voltage (Volts) Forward Current foA) Holding Current {mA) Power Dissipation (mW) DC Forward Anode Cunent (mA) Peak Recurrent Forward Current

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

100 amp npn darlington power transistors

Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Contextual Info: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0

NTE823

Abstract: NTE834 NTE835
Contextual Info: LINEAR INTEGRATED CIRCUITS NTE823 8-Lead DIP, See Diag. 245 Low Voltage Audio Amp, 1W Output, VCC = 15V NTE824 Low Noise, Dual Preamp, VCC = 30V 8-Lead DIP, See Diag. 245 NTE82S 14-Lead DIP, See Diag. 247 Battery Operated Audio Amp, 1W Output, V c c = 10V