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NGB8206 Datasheets (12)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NGB8206ANSL3G		On Semiconductor	NGB8206 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	119.74KB	8
NGB8206ANT4G		On Semiconductor	NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor	Original	PDF	119.74KB	8
NGB8206ANTF4G		On Semiconductor	NGB8206 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	119.74KB	8
NGB8206N		On Semiconductor	IGBT Transistor, 20 A, 350 V, N-Channel, Tape and Reel	Original	PDF	70.63KB	8
NGB8206N		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D²PAK; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Rail; Qty per Container: 50	Original	PDF	117.05KB	7
NGB8206NG		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D2PAK	Original	PDF	117.14KB	7
NGB8206NG		On Semiconductor	NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor	Original	PDF	119.74KB	8
NGB8206NT4		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D²PAK; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 800	Original	PDF	117.05KB	7
NGB8206NT4		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D2PAK	Original	PDF	70.65KB	8
NGB8206NT4G		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel D2PAK	Original	PDF	117.14KB	7
NGB8206NT4G		On Semiconductor	NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor	Original	PDF	119.74KB	8
NGB8206NTF4G		Littelfuse	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT IGNIT NCHAN 20A 400V D2PAK3	Original	PDF	125.18KB

NGB8206 Price and Stock

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onsemi


onsemi NGB8206ANT4G Trans IGBT Chip N-CH 390V 20A 150W 3-Pin(2+Tab) D2PAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NGB8206ANT4G		30,020		355	1 - 10 - 100 - 1000 $0.88 10000 $0.78	Buy Now
Rochester Electronics	NGB8206ANT4G		30,020		1	1 - 10 - 100 $0.85 1000 $0.70 10000 $0.63	Buy Now
onsemi NGB8206NG NGB8206NG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NGB8206NG		1,443		561	1 - 10 - 100 - 1000 $0.62 10000 $0.55	Buy Now
Rochester Electronics	NGB8206NG		1,788		1	1 - 10 - 100 $0.59 1000 $0.49 10000 $0.44	Buy Now
onsemi NGB8206NSL3G Trans IGBT Chip N-CH 390V 20A 150000mW 3-Pin(2+Tab) D2PAK Rail
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NGB8206NSL3G		225		216	1 - 10 - 100 - 1000 $1.44 10000 $1.29	Buy Now
Rochester Electronics	NGB8206NSL3G		225		1	1 - 10 - 100 $1.39 1000 $1.15 10000 $1.03	Buy Now
onsemi NGB8206NTF4 20 A, 350 V, N-CHANNEL D2PAK IGNITION IGBT Insulated Gate Bipolar Transistor, 20A I(C), 390V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	NGB8206NTF4		447			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NGB8206NT4G 20 A, 350 V, N-CHANNEL D2PAK IGNITION IGBT Insulated Gate Bipolar Transistor, 20A I(C), 390V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	NGB8206NT4G		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NGB8206 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
418B-04 Abstract: GB8206 Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206an ngb8206n/d 418b-04 +1gb8206	PDF
8206NG Abstract: NGB8206 Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	ngb8206n ngb8206n/d 8206ng ngb8206	PDF
Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206an ngb8206n/d	PDF
GB8206 Abstract: NGB8206A NGB8206NG Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206an ngb8206n/d gb8206 +2ngb8206a ngb8206ng	PDF
GB8206 Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206an ngb8206n/d gb8206	PDF
8206NG Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	ngb8206n ngb8206n/d 8206ng gb8206n +3ngb8206ng ngb8206nt4 ngb8206nt4g	PDF
b8206 Abstract: B8206n Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	ngb8206n ngb8206n/d b8206 b8206n	PDF
Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	ngb8206n ngb8206n/d	PDF
NGB8206N Abstract: NGB8206NT4 Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206n/d ngb8206nt4	PDF
b8206n Abstract: ignition IGBT NGB8206 Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n b8206n ignition igbt ngb8206	PDF
BS170 116 Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2 Contextual Info: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R	Original	2n7000 2n7000rlra 2n7000rlrm 2n7000rlrp +152n7000zl1 2n7002l 2n7002lt1 2n7002lt3 bs107 bs107a bs170 116 ntzd3155ct1g ntd18n06 nid5001 nud3124lt1g ntd30n02 ntzd3155ct5g ntr4503nt1 ntms4700nr2	PDF
ignition IGBT Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors VCE on (V) VGE = 4.0 V IC = 6.0 A VGE = 4.5 V IC = 10 A Min Energy Ratings Clamp Voltage Switching Speed (IC = 6.5 A) EAS (mJ) VCES (V) Resistive	Original	o-252 ngd8201nt4 ngd8205nt4 ngd18n40clbt4 +6ngd15n41clt4 o-264 ngb8202nt4 ngb8206nt4 ngb18n40clbt4 ignition igbt	PDF
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	cs8101 cs8151 cs8221 ncv317l +14ncv553 sc-82 soic-20 sgd516/d ntp2955g m74vhc1gt50 mbra340t3g ntr4003nt1g ncv78l00a ncv7420 mbrb20100ctt4g bat54cl mbrs2h100t3g mbrs340t3g	PDF
MOSFET P-channel SOT-23 Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N Contextual Info: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26	Original	2n7000 2n7002l mosfet60 ot-23 +12bs107 bs107a bs108 bs170 nud3124 nud3160 mosfet p-channel sot-23 ntd80n02 ntd18n06 ntms3p03r2 mld1n06cl nthd5904n	PDF

2N6284 inverter schematic diagram Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital	Original	sg388/d 2n6284 inverter schematic diagram ntd18n06 mkp9v160 +7sine wave inverter tl494 circuit diagram ecl ic nand adp3121 darlington transistor array ezairo mc74hc4538 tip142 6403 f	PDF