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    B8206 Search Results

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    B8206 Price and Stock

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    Littelfuse Inc LGB8206ARI

    Transistor: IGBT; 390V; 20A; D2PAK; Features: logic level; ESD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LGB8206ARI 1
    • 1 $1.35
    • 10 $1.21
    • 100 $0.97
    • 1000 $0.90
    • 10000 $0.90
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    Littelfuse Inc LGB8206ATI

    Transistor: IGBT; 390V; 20A; D2PAK; Features: logic level; ESD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME LGB8206ATI 1
    • 1 $1.35
    • 10 $1.21
    • 100 $0.97
    • 1000 $0.90
    • 10000 $0.90
    Get Quote

    Qualcomm RFFE Filter Products B39222B8206P810

    - Tape and Reel (Alt: B39222B8206P810)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B39222B8206P810 Tape & Reel 16 Weeks 5,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $1.74
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    Avnet Asia B39222B8206P810 16 Weeks 5,000
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    RF360 Holdings Singapore Pte Ltd B39222B8206P810

    Signal Conditioning Small cells Duplexers, 4G, 5G, 66, Duplexer, Size=2.5x2.0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics B39222B8206P810
    • 1 $4.06
    • 10 $3.32
    • 100 $2.72
    • 1000 $2.24
    • 10000 $1.61
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    Wiremold ULB820-6

    Lc, 17In Putty Wht W/4 5-20R Receps |Legrand Wiremold ULB820-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark ULB820-6 Bulk 5
    • 1 -
    • 10 $226.82
    • 100 $201.57
    • 1000 $201.57
    • 10000 $201.57
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    B8206 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    WS80a

    Abstract: b25353 siemens SPC 4320 C3227* transistor b25353-k1118-k4 siemens matsushita kondensator B25834-K6106-K9 K4106 V245 datenbuch
    Contextual Info: Inhaltsverzeichnis Anwendungen- und Bauformen-Übersicht Seite 5 9 Anwendungen Kondensator-Fragebogen 17 20 Allgemeine technische Angaben 23 Angaben zur Qualität 55 Gleichspannungs-Kondensatoren 63 Wechselspannungs-Kondensatoren 163 Kondensator-Befestigungen


    Original
    ws80ab25353siemens spc 4320c3227* transistor+6b25353-k1118-k4siemens matsushita kondensatorb25834-k6106-k9k4106v245datenbuch PDF

    K4106

    Abstract: transistor kA2 smd b25353 smd transistor ka2 C3227* transistor B25355 Siemens matsushita b5 VS4200 k2197k4 free transistor equivalent book more pag
    Contextual Info: Contents Application and Selector Guides Page 17 9 Applications Capacitor Questionnaire 17 20 General Technical Information 23 Quality 55 DC Capacitors 63 AC Capacitors 143 Mounting Parts Insulating Parts 325 333 Subject Index Symbols and Terms 335 338 1


    Original
    k4106transistor ka2 smdb25353smd transistor ka2+6c3227* transistorb25355siemens matsushita b5vs4200k2197k4free transistor equivalent book more pag PDF

    b8206

    Abstract: B8206n
    Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original
    ngb8206nngb8206n/db8206b8206n PDF

    Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original
    ngb8206nngb8206n/d PDF

    a04407

    Abstract: LA3870N LA3870NM A043B LA3870 N5211 taa66 Y152 30X30 N0795HK
    Contextual Info: KNo. N5211 N o . 5211 = m m m » -= L -x ï/1 ; N0795 y tfffi LA3870NM +%p&mmmïï LA3870N M ÍÍ, ¿ - Æ T V / -f X * * V-fe 5 mm • ■ y 4 > A J is x y ^ X fâ £ - t j- ^ /v i/x y - r x R S î • * r !✓>*//w y v t f W í S ■SNC/HCC • Q -BPF,SUB-BPF, 7 7 ^ ' > 5 ’J


    OCR Scan
    n5211la3870nm-la3870nmtas25+1330x3030x30x1468khz07kh2a04421la3870nmta04407la3870na043bla3870taa66y152n0795hk PDF

    NGB8206N

    Abstract: NGB8206NT4
    Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngb8206nngb8206n/dngb8206nt4 PDF

    b8206n

    Abstract: ignition IGBT NGB8206
    Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngb8206nb8206nignition igbtngb8206 PDF

    k1357 transistor

    Abstract: K1357 c2335 K4106 nec C1685 transistor siemens b25353 c2335 r transistor c2335 k1117 b25353
    Contextual Info: Contents Application and Selector Guides Page 5 9 Applications Capacitor Questionnaire 17 20 General Technical Information 23 Quality 55 DC Capacitors 63 AC Capacitors 143 Mounting Parts Insulating Parts 325 333 Subject Index Symbols and Terms 335 338 1


    Original
    k1357 transistork1357c2335k4106+6nec c1685 transistorsiemens b25353c2335 rtransistor c2335k1117b25353 PDF