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Rochester Electronics LLC


Rochester Electronics LLC SGB8206NSL3G IGBT D2PAK 350V 20A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SGB8206NSL3G	Bulk	19,200		466	1 - 10 - 100 - 1000 $0.64 10000 $0.64	Buy Now
Rochester Electronics LLC NGB8206NTF4G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NTF4G	Bulk	12,600		173	1 - 10 - 100 - 1000 $1.74 10000 $1.74	Buy Now
Rochester Electronics LLC NGB8206NSL3 IGBT, 20A, 390V, N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NSL3	Bulk	3,350		404	1 - 10 - 100 - 1000 $0.74 10000 $0.74	Buy Now
Rochester Electronics LLC NGB8206NG IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NG	Tube	1,788		404	1 - 10 - 100 - 1000 $0.74 10000 $0.74	Buy Now
Rochester Electronics LLC NGB8206NT4G INSULATED GATE BIPOLAR TRANSISTO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NT4G	Bulk	892		173	1 - 10 - 100 - 1000 $1.74 10000 $1.74	Buy Now

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B8206N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b8206 Abstract: B8206n Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	NGB8206N NGB8206N/D b8206 B8206n	PDF
Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	NGB8206N NGB8206N/D	PDF
NGB8206N Abstract: NGB8206NT4 Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N NGB8206N/D NGB8206N NGB8206NT4	PDF
b8206n Abstract: ignition IGBT NGB8206 Contextual Info: B8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N NGB8206N b8206n ignition IGBT NGB8206	PDF