8206NG
Abstract: NGB8206
Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and
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NGB8206N
NGB8206N/D
8206NG
NGB8206
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8206NG
Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G
Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and
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Original
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NGB8206N
NGB8206N/D
8206NG
GB8206N
NGB8206N
NGB8206NG
NGB8206NT4
NGB8206NT4G
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PDF
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