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    NGD8201NT4 Search Results

    NGD8201NT4 Datasheets (6)

    On Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NGD8201NT4
    On Semiconductor Ignition IGBT 20 A, 400V, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 Original PDF 142.89KB 7
    NGD8201NT4
    On Semiconductor Ignition IGBT 20 A, 400 V, N-Channel DPAK Original PDF 109.98KB 8
    NGD8201NT4
    On Semiconductor Ignition IGBT 20 A, 400 V, N-Channel DPAK Original PDF 67.3KB 8
    NGD8201NT4
    On Semiconductor IGBT Chip, N Channel, 440V, DPAK, 4-Pin Original PDF 67.32KB 8
    NGD8201NT4G
    On Semiconductor NGD8201 - TRANSISTOR 20 A, 400 V, N-CHANNEL IGBT, LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3, Insulated Gate BIP Transistor Original PDF 122.62KB 8
    NGD8201NT4G
    On Semiconductor TRANS IGBT CHIP N-CH 440V 20A 3DPAK T/R Original PDF 77.52KB 7
    SF Impression Pixel

    NGD8201NT4 Price and Stock

    onsemi

    onsemi NGD8201NT4G

    Trans IGBT Chip N-CH 440V 20A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: NGD8201NT4G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NGD8201NT4G Tape & Reel 2,500
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    EBV Elektronik NGD8201NT4G 26 Weeks 2,500
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    Vyrian NGD8201NT4G 10,702
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    onsemi NGD8201NT4

    Insulated Gate Bipolar Transistor, 20A I(C), 440V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian NGD8201NT4 10,505
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    NGD8201NT4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    8201N

    Abstract: 20A400 Direct fuel injection ignition IGBT
    Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    ngd8201n8201n20a400direct fuel injection+1ignition igbt PDF

    8201N

    Abstract: ignition coil IGBT
    Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original
    ngd8201nngd8201n/d8201nignition coil igbt PDF

    Contextual Info: NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngd8201nngd8201anngd8201n/d PDF

    BS170 116

    Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2
    Contextual Info: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R


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    2n70002n7000rlra2n7000rlrm2n7000rlrp+152n7000zl12n7002l2n7002lt12n7002lt3bs107bs107abs170 116ntzd3155ct1gntd18n06nid5001nud3124lt1gntd30n02ntzd3155ct5gntr4503nt1ntms4700nr2 PDF

    ignition IGBT

    Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors VCE on (V) VGE = 4.0 V IC = 6.0 A VGE = 4.5 V IC = 10 A Min Energy Ratings Clamp Voltage Switching Speed (IC = 6.5 A) EAS (mJ) VCES (V) Resistive


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    o-252ngd8201nt4ngd8205nt4ngd18n40clbt4+6ngd15n41clt4o-264ngb8202nt4ngb8206nt4ngb18n40clbt4ignition igbt PDF

    8201N

    Abstract: NGD8201N NGD8201NT4
    Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngd8201nngd8201n/d8201nngd8201nt4 PDF

    8201NG

    Abstract: NGD 8201NG NGD8201NG 8201n NGD8201NT4G NGD8201N NGD8201NT4
    Contextual Info: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngd8201nngd8201n/d8201ngngd 8201ng+4ngd8201ng8201nngd8201nt4gngd8201nt4 PDF

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


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    cs8101cs8151cs8221ncv317l+14ncv553sc-82soic-20sgd516/dntp2955gm74vhc1gt50mbra340t3gntr4003nt1gncv78l00ancv7420mbrb20100ctt4gbat54clmbrs2h100t3gmbrs340t3g PDF

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Contextual Info: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


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    sgd501/d74vcx16373dt74vcx16373dtr74vcx16374dt+1416bit74vcx16374dtr80sq045n80sq045nrl1500w audio amplifier circuitschottky diode 80v 6a1500w pwm 220vc106mgmarking code ss sot23tl494cn inverter datasheetsmps 1500wmmsz5231bt1gdc 220v motor speed control circuit with scrncp1200p60g PDF

    8201N

    Abstract: 20A400 NGD8201N NGD8201NT4
    Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngd8201nngd8201n/d8201n20a400+1ngd8201nt4 PDF

    8201N

    Abstract: NGD8201N NGD8201NT4 ngd8201
    Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and


    Original
    ngd8201nngd8201n/d8201nngd8201nt4+1ngd8201 PDF

    8201N

    Abstract: NGD8201N NGD8201NT4
    Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngd8201nngd8201n/d8201nngd8201nt4 PDF

    8201NG

    Abstract: 8201n NGD 8201NG NGD8201NG NGD8201N NGD8201NT4 NGD8201NT4G
    Contextual Info: NGD8201N Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngd8201nngd8201n/d8201ng8201n+4ngd 8201ngngd8201ngngd8201nt4ngd8201nt4g PDF

    NGD8201N

    Abstract: 8201x NGD8201AN 8201xg NGD8201ANT4G
    Contextual Info: NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngd8201nngd8201anngd8201n/d8201x+28201xgngd8201ant4g PDF

    NGD8201A

    Contextual Info: NGD8201N, NGD8201AN Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses


    Original
    ngd8201nngd8201anngd8201n/dngd8201a PDF

    CS5170

    Abstract: MUR1620CTA NTP3055 SBRS81100T3G MC1741CP 2N5458 SUBSTITUTE SPEED CONTROL of DC MOTOR tda1085c DIODE SWCH 100V SS SOT23 TR znr SF 471 NCP1200AP60
    Contextual Info: SGD501/D REV 17, April 10, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: APRIL 10, 2004  General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original
    sgd501/d74vcx16373dt74vcx16373dtr74vcx16374dt+1416bit74vcx16374dtr80sq045n80sq045nrlcs5170mur1620ctantp3055sbrs81100t3gmc1741cp2n5458 substitutespeed control of dc motor tda1085cdiode swch 100v ss sot23 trznr sf 471ncp1200ap60 PDF