NGD8205NT4 Search Results

NGD8205NT4 Datasheets (4)

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On Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NGD8205NT4		On Semiconductor	Ignition IGBT 20 a, 350 V, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500	Original	PDF	137.9KB	7
NGD8205NT4		On Semiconductor	Ignition IGBT 20 A, 350 V, N-Channel DPAK	Original	PDF	67.87KB	8
NGD8205NT4		On Semiconductor	IGBT Transistor, 20 A, 350 V, N-Channel, Tape and Reel	Original	PDF	67.46KB	8
NGD8205NT4G		On Semiconductor	TRANS IGBT CHIP N-CH 390V 20A 3DPAK T/R	Original	PDF	78.36KB	7

NGD8205NT4 Price and Stock

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onsemi


onsemi NGD8205NT4G Trans IGBT Chip N-CH 390V 20A 125W 3-Pin(2+Tab) DPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	NGD8205NT4G		87,296		253	1 - 10 - 100 - 1000 $1.23 10000 $1.10	Buy Now
Rochester Electronics	NGD8205NT4G		87,296		1	1 - 10 - 100 $1.19 1000 $0.99 10000 $0.88	Buy Now
ComSIT USA	NGD8205NT4G		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NGD8205NT4 20 AMP, 350 VOLT, N-CHANNEL DPAK IGNITION IGBT Insulated Gate Bipolar Transistor, 20A I(C), 390V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	NGD8205NT4		495			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	NGD8205NT4		4,906			1 - 10 - 100 - 1000 - 10000 -	Get Quote

NGD8205NT4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
8205NG Abstract: NGD 8205NG NGD8205N NGD8205NT4 NGD8205NT4G Contextual Info: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngd8205n ngd8205n/d 8205ng ngd 8205ng +2ngd8205nt4 ngd8205nt4g	PDF
Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	ngd8205n ngd8205n/d	PDF
8205N Abstract: NGD8205N NGD8205NT4 Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngd8205n ngd8205n/d 8205n ngd8205nt4	PDF
Contextual Info: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngd8205n ngd8205an ngd8205n/d	PDF
8205N Abstract: 8205 NGD8205N NGD8205NT4 0000001D Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngd8205n ngd8205n/d 8205n 8205 +2ngd8205nt4 0000001d	PDF
BS170 116 Abstract: NTZD3155CT1G NTD18N06 NID5001 NUD3124LT1G NTD30N02 NTZD3155CT5G ntr4503nt1 NTMS4700NR2 Contextual Info: Data Sheet Page Data Sheet Page Data Sheet Page 2N7000 17, 26 MMBF170LT3 12, 95 NTA4001NT1 11, 259 2N7000RLRA 17, 26 MMBF170LT3 12, 95 NTA4151PT1 11, 263 2N7000RLRM 17, 26 MMBF2201NT 11, 98 NTA4153NT1 11, 268 2N7000RLRP 17, 26 MMBF2202PT1 11, 102 NTB125N02R	Original	2n7000 2n7000rlra 2n7000rlrm 2n7000rlrp +152n7000zl1 2n7002l 2n7002lt1 2n7002lt3 bs107 bs107a bs170 116 ntzd3155ct1g ntd18n06 nid5001 nud3124lt1g ntd30n02 ntzd3155ct5g ntr4503nt1 ntms4700nr2	PDF
ignition IGBT Contextual Info: ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors VCE on (V) VGE = 4.0 V IC = 6.0 A VGE = 4.5 V IC = 10 A Min Energy Ratings Clamp Voltage Switching Speed (IC = 6.5 A) EAS (mJ) VCES (V) Resistive	Original	o-252 ngd8201nt4 ngd8205nt4 ngd18n40clbt4 +6ngd15n41clt4 o-264 ngb8202nt4 ngb8206nt4 ngb18n40clbt4 ignition igbt	PDF
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	cs8101 cs8151 cs8221 ncv317l +14ncv553 sc-82 soic-20 sgd516/d ntp2955g m74vhc1gt50 mbra340t3g ntr4003nt1g ncv78l00a ncv7420 mbrb20100ctt4g bat54cl mbrs2h100t3g mbrs340t3g	PDF
NGD8205NT4G Contextual Info: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngd8205n ngd8205an ngd8205n/d ngd8205nt4g	PDF
NGD8205AN Abstract: NGD8205A Contextual Info: NGD8205N, NGD8205AN Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngd8205n ngd8205an ngd8205n/d ngd8205a	PDF
8205N Abstract: ignition IGBT Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngd8205n 8205n ignition igbt	PDF
NGD 8205NG Abstract: 8205NG NGD8205N NGD8205NT4 NGD8205NT4G Contextual Info: NGD8205N Ignition IGBT 20 Amp, 350 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngd8205n ngd8205n/d ngd 8205ng 8205ng +2ngd8205nt4 ngd8205nt4g	PDF
dpak 369C Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	ngd8205n ngd8205n/d dpak 369c	PDF