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Littelfuse Inc LGB8206ARI Transistor: IGBT; 390V; 20A; D2PAK; Features: logic level; ESD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	LGB8206ARI				1	1 $1.35 10 $1.21 100 $0.97 1000 $0.90 10000 $0.90	Get Quote
Littelfuse Inc LGB8206ATI Transistor: IGBT; 390V; 20A; D2PAK; Features: logic level; ESD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	LGB8206ATI				1	1 $1.35 10 $1.21 100 $0.97 1000 $0.90 10000 $0.90	Get Quote
onsemi NGB8206ANT4G IGBT-Single 390V 20A 150W TO-263-3 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	NGB8206ANT4G		30,020		1	1 - 10 - 100 $0.85 1000 $0.70 10000 $0.63	Buy Now
onsemi SGB8206ANSL3G IGBT 20A, 350V, N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SGB8206ANSL3G		48,731		1	1 - 10 - 100 $1.19 1000 $0.99 10000 $0.88	Buy Now
onsemi SGB8206NSL3G IGBT D2PAK 350V 20A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SGB8206NSL3G		19,200		1	1 - 10 - 100 $0.52 1000 $0.43 10000 $0.38	Buy Now

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GB8206 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
418B-04 Abstract: GB8206 Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206an ngb8206n/d 418b-04 +1gb8206	PDF
Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206an ngb8206n/d	PDF
GB8206 Abstract: NGB8206A NGB8206NG Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206an ngb8206n/d gb8206 +2ngb8206a ngb8206ng	PDF
GB8206 Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	ngb8206n ngb8206an ngb8206n/d gb8206	PDF
8206NG Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G Contextual Info: GB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	ngb8206n ngb8206n/d 8206ng gb8206n +3ngb8206ng ngb8206nt4 ngb8206nt4g	PDF