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Rochester Electronics LLC


Rochester Electronics LLC SGB8206ANSL3G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SGB8206ANSL3G	Tube	48,731		202	1 - 10 - 100 - 1000 $1.49 10000 $1.49	Buy Now
Rochester Electronics LLC SGB8206ANTF4G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SGB8206ANTF4G	Bulk	41,601		202	1 - 10 - 100 - 1000 $1.49 10000 $1.49	Buy Now
Rochester Electronics LLC NGB8206ANT4G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANT4G	Bulk	32,020		284	1 - 10 - 100 - 1000 $1.06 10000 $1.06	Buy Now
Rochester Electronics LLC SGB8206NSL3G IGBT D2PAK 350V 20A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SGB8206NSL3G	Bulk	19,200		466	1 - 10 - 100 - 1000 $0.64 10000 $0.64	Buy Now
Rochester Electronics LLC NGB8206NTF4G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NTF4G	Bulk	12,600		173	1 - 10 - 100 - 1000 $1.74 10000 $1.74	Buy Now

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GB8206 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
418B-04 Abstract: GB8206 Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206	PDF
Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D	PDF
GB8206 Abstract: NGB8206A NGB8206NG Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG	PDF
GB8206 Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D GB8206	PDF
8206NG Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G Contextual Info: GB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G	PDF