NF 846 Search Results

PANASONIC CE FC CAPACITOR

Abstract: 5U473
Contextual Info: Panasonic S C iS J V T V tt C J - J U H + l » K 5/ ^ S eries: Electric Double Layer Capacitors/NF Electric Double Layer Capacitors Gold Capacitor) Japan NF • 1 FT'8 mm max. • CMOSCDv-i 3 > • RAM^WfiK/JvBfà»/* - j ï 7 Features v 7\ • M a xim u m h e ig h t o f 8 m m fo r 1F

TGF4350-EPU

Contextual Info: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

Contextual Info: Advance Product Information April 16, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

Contextual Info: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x

Contextual Info: Advance Product Information January 18, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

TGA4350EPU

Abstract: TGF4350-EPU microwave heating source configuration
Contextual Info: Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.5080 mm x

55n60

Abstract: transistor Bc 949 transistor BC 56 BDP 71 AF-Transistor siemens sot223 Transistor bdp 71 4126P SOT-223 2907 BC 948
Contextual Info: Transistoren Transistors NF-Transistoren Transistoren für allgemeine und Schaltanwendungen AF-Transistors General Purpose and Switching Transistors Type N = NPN P = PNP Maximum Ratings Chara cteristics [Tk - 2>5°C J'CEO V mA ^CBQ Ptot / t mW MHz nA at VQB0 hfE

TGF4350

Contextual Info: Product Data Sheet August 5, 2008 300um Discrete pHEMT TGF4350 Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x

TGF4350-EPU

Contextual Info: Advance Product Information May 15, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x

transistor 3866 s

Abstract: 5812 MOTOROLA 3866 transistor c 3866 transistor MRF5583 8372 motorola transistor 3866 MOC205R1
Contextual Info: SO-8 Devices Maximum die size 40 mil x 60 mil C A SE 751-05 CASE 846-01 RF Transistors Maximum Ratings Galn-Bandwidth NF @ <s 2.1 1.5 0.8 1.6 2.25 5.5 5 -3 5 35 50 50 50 75 75 — — 3.4 200 — — — — — — 2 500 — Typ dB MHz 1.5 12 10.5 18 12 15.5

Contextual Info: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated

Contextual Info: plerowTM ALN0837 Internally Matched LNA Module Features Description • S21 = 36.2 dB @ 828 MHz = 35.8 dB @ 847 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 3.3V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: NCP623 Product Preview Ultra Low Noise 150 mA Low Dropout Voltage Regulator with ON/OFF Control http://onsemi.com Housed in a Micro8t package, the NCP623 delivers up to 150 mA where it exhibits a typical 180 mV dropout. With an incredible noise level of 25 mVRMS over 100 Hz to 100 kHz, with a 10 nF bypass

C945K

Abstract: c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B
Contextual Info: NPN Low Level Amplifiers Device No. [Mark] K S C 900 Case Style I CBO IC V CE VCB h FE & @ Min Max mA (V) (nA) @ (V) Max V CE(SAT) (V) Max & V BE(SAT) V BE(ON) * IC @ (mA) IC C ob (pF) (V) (I = ) Min Max B 10 Max I (MHz) @ C Min (mA) NF (dB) Max Test Cond.

HT 1000-4 power amplifier

Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
Contextual Info: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22|xF 4 k il 1 nF 1 0 0 jlF * V OUT V|N C - Q1 -O h anyCAP LDO TOPOLOGY - | - C COMP N O N IN V E R T IN G W ID E B A N D

CJW SOT-23

Abstract: bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89

S0642

Abstract: pin configuration BFW 11 BF520 BF519 BF654 BFP91 BFR92A BFS17 BFT50 BFX89
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89

CB307

Abstract: C22B CJW SOT-23 CB438
Contextual Info: 40. 900 MHz Packagi» *C c 12* NF M H z (m A ) c 22b* (pF) (dB) > 1300 25 < 6 ,5 (3 ) < 5 (3) V(B R )C E O m in. ff (V ) 15 15 @ ft lc / f V eut 'MO CMD (m A ) (M H z) (m V ) (dB) (dB) 2 2 500 500 SS 1 I T yp*» Polarity j C LA S S A LINEAR FOR C A T V / M A T V A P P LICA TIO N S

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

TGA2519-SG

Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m

Contextual Info: WSA-00038 High Selectivity A-Band Filter Assembly Description: The WSA-00038 is a compact, high selectivity A-band receive system assembly consisting of two filters covering primary and extended A receive bands 824-835MHz and 845-846.5MHz respectively , dual

Contextual Info: WSA-00044 AMPS B-band High Selectivity Receive Filter Assembly ◆ Description: The WSA-00044 is a dual filter assembly consisting of a high performance WSF-00002 primary B-band receive filter 835 to 849 MHz , cascaded with a WSN-00030 (extended A-band 845.25 to 846.25 MHz) notch filter

Contextual Info: WSA-00044 AMPS B-band High Selectivity Receive Filter Assembly ◆ Description: The WSA-00044 is a dual filter assembly consisting of a high performance WSF-00002 primary B-band receive filter 835 to 849 MHz , cascaded with a WSN-00030 (extended A-band 845.25 to 846.25 MHz) notch filter

smr 40000 c

Abstract: SMR 40000
Contextual Info: WSN-00112/WSA-00140 — SMR 851-866 MHz Notch Filter ◆ Features: • Specific Design for A-Side Service Providers • Elliptic Response Design; Sharp Roll-off • High Rejection; >40 dB @ 851 MHz • Low Loss; 0.5 dB Typical @ 846.5 MHz • Single Sector Assembly Model Available