TGA4350EPU Search Results

TGF4350-EPU

Contextual Info: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

Contextual Info: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x

Contextual Info: Advance Product Information April 16, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

TGA4350EPU

Abstract: TGF4350-EPU microwave heating source configuration
Contextual Info: Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.5080 mm x

Contextual Info: Advance Product Information January 18, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration