NEC UPA Search Results

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

NEC uPA101G

Abstract: UPA101B UPA101G
Contextual Info: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

lm317cz

Abstract: UMEB78K0ST113 ADAPTER circuit AC TO DC 220V TO 6V A78000 uCOM78k0 PD78P014 COM78k0 80286 microprocessor schematics 80286 cpu NEC GAL programmer schematic
Contextual Info: NEC Electronics Europe GmbH 78K0 Starter Kit User's Manual UMEB78K0ST113*11 NEC Electronics (Europe) GmbH 78K0 Starter Kit User's Manual The Information in this document is subject to change without notice. No part of this document may be copied or reproduced in any form without the prior written

AUTOMATIC light dim dip CONTROLLER

Abstract: data sheet 1734352-1 LXML-PM01 RS-232 protocol omron APDS-9005 rs232 level converter dmx rs232 converter dmx Luxeon K2 driver schematic Thermistor NTC-10 dmx-512
Contextual Info: User’s Manual 78K0 - Shine It! Demonstration Board for NEC Electronics µPD78f8024 High-CurrentDrive/LED Microcontroller Document No. U19610EE3V0UM00 Date Published May 2009 NEC Electronics Europe GmbH 78K0 - Shine It! • The information in this document is current as of June, 2008. The information is subject to change

nec transistor

Abstract: transistor and schematic symbols
Contextual Info: NEC-TRANSISTOR ARRAY FEATURES UPA101G CONNECTION DIAGRAM BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Top view) UPA101G OUTSTANDING hFE LINEARITY SMALL PACKAGE _1 1_ 1- TAPE AND REEL PACKAGING OPTION

Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

nec transistor

Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 G H z Single Transistors • OUTSTANDING hFE LINEARITY UPA102G CONNECTION DIAGRAM (Top view ) UPA102G 14 • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE

Silicon Bipolar Transistor Q6

Contextual Info: NEC-TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: UPA101B (9 GHz Single Transistors) 14 OUTSTANDING hFE LINEARITY 13 12 11 10 9 6 TWO PACKAGE OPTIONS: UPA101B: Superior thermal dissipation due to studded

Contextual Info: DATA S H EE T_ NEC MOS FIELD EFFECT TRANSISTOR ¿¿PA611TA N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA611TA is a switching device which can be driven directly by a

k 3531 transistor

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TF OUTLINE DIMENSIONS Units FEATURES • • • LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: • SMALL PACKAGE STYLE: in mm P ackage Outline T S 06 (Top View)

Contextual Info: NEC UPA103B UPA103G TRANSISTOR ARRAY CONNECTION DIAGRAM FEATURES FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be jsed as differential amplifiers Top View UPA103B 14 13 12 11 10 9 8 OUTSTANDING hFE LINEARITY TWO PACKAGE OPTIONS:

HA 12045

Abstract: IC 7487 TRANSISTOR 023 3010 pin configuration ic 7421 pt 6964 pin IC 7479 k 3531 transistor
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA826TF OUTLINE DIMENSIONS Units in mm LOW NOISE AND HIGH GAIN OPERABLE AT LOW VOLTAGE SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package

9013 npn transistor pin view

Abstract: pin configuration of 7496 IC NEC 14324 ic ma 4810 15251 hfe 4538 UPA827TF pin configuration ic 7448 IC 7432 5942
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA827TF PACKAGE DRAWING Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline TS06 (Top View) IS 2 1 EI2 = 9 dB T Y P a t f = 2 G H z, V ce = 2 V, Ic = 7 mA

Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA828TF OUTLINE DIMENSIONS Unit in mm LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, V ce = 2 V, Ic = 3 mA Package Outline TS 06 (Top View) -* HIGH GAIN: 2.1 ±0.1 i ► r» — 1.25± 0

CD 5888 CB

Abstract: transistor BU 5027 CD 5888 ic cd 5220 buffer ic transistor d 13009 UPA831TF CD 5888 cb ic cd 4847 pa831
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA831TF FEATURES Units in mm OUTLINE DIMENSIONS LOW NOISE: Package Outline TS06 Q1:NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, Ic = 7 mA

ta 8653 n

Abstract: ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA835TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA — Q2.NF = 1.2 dB TYP at f = 1 GHz, Vce = 3 V, Ic = 7 mA

UPA831TF

Abstract: NE856
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q1:NF = 1.4 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:NF = 1.2 dB TYP at f = 1 G Hz, V ce = 3 V, Ic = 7 mA

A103G

Abstract: a103g transistors
Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM Top view • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: UPA103G T w o of th e s e use a c o m m o n e m itte r pin an d ca n b e 14 u sed as d ifferen tial am p lifiers 13 12 11

Contextual Info: DATA SHEET NEC Compound Field Effect Power Transistor _j PA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The ¿¡PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, m otor and lamp driver.

nec 14312 transistor

Abstract: pt 9795 tp 4056 configuration of ic 7819
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA834TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.4 dB T Y P at f = 1 G Hz, V ce = 3 V, Ic = 7 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V ce = 3 V, Ic = 7 mA

5252 F 1005

Abstract: 6681 - 250 transistor npn d 5058 cd 4027
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V ce = 3 V, Ic = 3 mA Q 2:N F = 1.7 dB T Y P at f = 2 G Hz, V ce = 1 V, Ic = 3 mA