UPA103G Search Results

a103g

Abstract: a103g transistors transistor micro-x q6 Monolithic Transistor Pair UPA103G UPA103G-E1
Contextual Info: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE

A103G

Abstract: a103g transistors
Contextual Info: NEC TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM Top view • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: UPA103G T w o of th e s e use a c o m m o n e m itte r pin an d ca n b e 14 u sed as d ifferen tial am p lifiers 13 12 11

Contextual Info: TRANSISTOR ARRAY FEATURES_ UPA103G CONNECTION DIAGRAM • FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers Top View UPA103G 14 13 12 11 10 9 8 • OUTSTANDING hFE LINEARITY

a 103g

Abstract: a103g
Contextual Info: TRANSISTOR ARRAY UPA103G CONNECTION DIAGRAM FEATURES Top View FIVE MONOLITHIC 9 GHz tr TRANSISTORS: UPA103G T w o o f th e se use a com m o n em itter pin and can be used as diffe re ntia l am plifiers OUTSTANDING hFE 14 13 12 11 10 LINEARITY SMALL PACKAGE

Contextual Info: UPA103G IL00 * DIFFERENTIAL AMPLIFIERS/PULSE PATTERN GENERATORS -TOP VIEW- 1 14 2 13 3 12 4 11 5 10 6 9 7 8

a103g

Abstract: a103g transistors UPA103G UPA103G-E1
Contextual Info: TRANSISTOR ARRAY FEATURES UPA103G CONNECTION DIAGRAM Top View • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers UPA103G 14 • OUTSTANDING hFE LINEARITY 13 12 11 10 9 8 SUB • SMALL PACKAGE

Contextual Info: NEC UPA103B UPA103G TRANSISTOR ARRAY CONNECTION DIAGRAM FEATURES FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin and can be jsed as differential amplifiers Top View UPA103B 14 13 12 11 10 9 8 OUTSTANDING hFE LINEARITY TWO PACKAGE OPTIONS:

transistor A 564

Abstract: transistor am s20 T06 transistor transistor t06 19 transistor t06
Contextual Info: Transistor Arrays gtECTRICAL CHARACTERISTICS <7> * 2SX! • fr Mm SLt * ; UPA101G1 UPA1Q2G2 UPA103G3 hFE Ces CCS: mA) CcB tpF) (pF) (pF) MAX MAX TYP TYP TYP TYP 1.0 1.0 1.0 1.0 100 - 1.0 1.0 100 100 0.9 1.4 1.4 1.4 •:1.4 iCBO (GHz) TYP MAX 9 40 40 40

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

a103g

Abstract: a102g UPA102G 3232 a103g transistors A103G datasheet UPA103G
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. G14 14 13 12 11 10 9 8 2 3 4 5 6 7 f 1.2 N 1.0 TYP 1 1.1 TYP 10.3 MAX +0.3 6.5 -0.2 0.15 TYP 1.6 MAX +0.10 0.15 -0.05 4.65 MAX 1.7 MAX

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

4 npn transistor ic 14pin

Abstract: PA1032 8 npn transistor ic 14pin
Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIM ENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: ¿fPA103 B Two of these use a common em itter pin and can be used as differential am plifiers

Contextual Info: DATA SHEET COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: /iPA103 B Two of these use a common em itter pin and can be used as differential am plifiers

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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