PA103B Search Results

OPA103AM

Abstract: OPA103CM OPA103BM OPA 279 opa 741 opa 10m OPA103 OPA103DM OPA105 OPA TO99 package
Contextual Info: B U R R -B R O W N ÏÏM M OPA1Q3 Ë For a /883B version of this p ro d u ct se e OPA105/883B in the Military P roducts section. Low Drift - Low Bias Current F E T Input O P E R A T I O N A L A M P LIFIER FEATURES APPLICATIONS • LOW BIAS CURRENT, Ip A. max

PA101B

Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Contextual Info: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

MPA103F

Abstract: MPA103B sub-mini Pushbutton Switch" mpb103
Contextual Info: A U 6A T/ INTC ON PRDT G P 4TE D • 10 T S 3 3 S ÜG Ü l b b 4 MPA3 SERIES 1Ô2 H A U I P / Sub-Mini Pushbutton I SPECIFICATIONS C ontacts:. silver clad Contact Rating: .500 mA at 125 VAC Butt contact MPA 103B &C

4 npn transistor ic 14pin

Abstract: PA1032 8 npn transistor ic 14pin
Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIM ENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: ¿fPA103 B Two of these use a common em itter pin and can be used as differential am plifiers

Contextual Info: DATA SHEET COMPOUND TRANSISTOR _jfPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • FIVE M O NO LITHIC 9 GHz fr T R A NSISTO R S: /iPA103 B Two of these use a common em itter pin and can be used as differential am plifiers