IC 7448
Abstract: pin configuration of 7496 IC UPA827TF pin configuration ic 7448 pin configuration NPN transistor 9013 npn NE686 S21E UPA827TF-T1-A 8 pin ic 3842 NEC 14324
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • UPA827TF OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: |S21E|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA
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upa827tfne686upa827tf-t1-aic 7448+6pin configuration of 7496 icpin configuration ic 7448pin configuration npn transistor 9013 npns21e8 pin ic 3842nec 14324
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UPA827TF
Abstract: k 3531 transistor
Contextual Info: PRELIMINARY DATA SHEET UPA827TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline T S 06 (Top View) |S 2 ie |2 = 9 dB T Y P at f = 2 G Hz, V ce = 2 V, Ic = 7 m A
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9013 npn transistor pin view
Abstract: pin configuration of 7496 IC NEC 14324 ic ma 4810 15251 hfe 4538 UPA827TF pin configuration ic 7448 IC 7432 5942
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA827TF PACKAGE DRAWING Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: Package Outline TS06 (Top View) IS 2 1 EI2 = 9 dB T Y P a t f = 2 G H z, V ce = 2 V, Ic = 7 mA
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upa827tfupa827tf-t19013 npn transistor pin viewpin configuration of 7496 ic+7nec 14324ic ma 481015251hfe 4538pin configuration ic 7448ic 74325942
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UPA827TF
Abstract: UPA833TF NE685 UPA814T
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01
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ne696m01ne698m01ne699m01upa806t+8upa807tupa808tupa809tupa814tne685ne686upa827tfupa833tf
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NEC 7815
Abstract: nec 9531 NEC 14324 transistor npn c 9013 UPA827TF LT 5242 OF IC 7448 7464 pin configuration pin configuration of ic 7448 ls 7432 IC pin configuration
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • PACKAGE DRAWING Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: P ackage Outline T S 06 (Top View) |S 2 ie |2 = 9 dB T Y P at f = 2 G Hz, V ce = 2 V, Ic = 7 m A
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upa827tfupa827tf-t124-hournec 7815+8nec 9531nec 14324transistor npn c 9013lt 5242of ic 74487464 pin configurationpin configuration of ic 7448ls 7432 ic pin configuration
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uPA63
Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
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upa800tupa801tupa802tupa806t+10upa807tupa808tupa809tura810tupa811tupa812tupa63upa827tfupa831tfne685
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hfe 4538
Abstract: IC 7448 IC 7432 pin configuration ic 7448 UPA827TF ic LC 7815 pin configuration of ic 7448 pin configuration NPN transistor 9013 npn pin configuration of 7496 IC C 4804 transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm HIGH GAIN WITH LOW OPERATING CURRENT: |S21E|2 = 9 dB TYP at f = 2 GHz, VCE = 2 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 |S21E|2 = 8.5 dB TYP at f = 2 GHz, VCE = 1 V, lc = 5 mA
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upa827tfne686upa827tf-t124-hour+9hfe 4538ic 7448ic 7432pin configuration ic 7448ic lc 7815pin configuration of ic 7448pin configuration npn transistor 9013 npnpin configuration of 7496 icc 4804 transistor
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SR8800SMQ1950BY
Abstract: colpitt oscillator design lc colpitt oscillator SR8800SMQ2000BY rohde UPA cascode transistor array VCO NEC uPA 1400 sr8800 Simulation of 3 phase common mode choke R68000
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1034 Designing VCOs and Buffers Using the UPA family of Dual Transistors Abstract This application note will review the process by which VCO Voltage Controlled Oscillator designers choose their oscillator’s topology and devices based on performance requirement, real estate constraints and DC power consumption. Using a Personal Communication System (PCS) application as a practical example, this article will demonstrate a
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an1034sr8800smq1950bycolpitt oscillator designlc colpitt oscillator+7sr8800smq2000byrohde upacascode transistor array vconec upa 1400sr8800simulation of 3 phase common mode choker68000
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UPA827TF
Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T
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upa800tupa801tupa802tupa806t+15upa807tupa808tupa809tupa810tupa811tupa812tupa827tfupa833tfupa831tfsot 363175 sot363sot 153ne685dual sot363sot-363
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