NEC MICROWAVE Search Results

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

A98-KMP6J1F1-1A

Abstract: pc based rf wireless controlled toy car docomo LED highlight SMS controlled LED based scrolling message display NEC AMERICA Car cigar charger mobile phone repair hands free microphone Yamaha Musical
Contextual Info: CopyrightÓ 2003 by NEC America, Inc. All rights reserved. NEC is a registered trademark of NEC Corporation. All other company or product names are the trademarks of their respective owners. Manual Part Number: 621-0351 Version 1.4* *This may include features not available in all NEC 525 phones, or may not include features available in updated or later version 525 phones. Contact NEC Service Support with any

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

nec 2502 4 pin

Abstract: nec 2502 hcpl a 34 Avago cross Avago Cross Reference hcpl0600 HCPL-063L HCPL-063N PS9617 "Pin for Pin" HCPL-060L
Contextual Info: Cross Reference California Eastern Laboratories NEC Replacements for High Speed Optocouplers Part Number Cross Reference for NEC and Avago Agilent 25 Mbps DIP-8 Package NEC Part Number PWD - Pulse Width Distortion (ns) PS9661 15 Mbps CMOS Output Single Channel

nec book

Abstract: transister relay book NEC RELAY
Contextual Info: NEC Semiconductor Data Book List NEC Semiconductor Data Book CD-ROM List April 1999 Following is the list of the Semiconductor Data Books NEC has published. If you need a copy, please ask our sales representative. Title / Items Memory (English / Japanese)

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

FIP6C13

Abstract: FIP7B13 NEC FIP FIP5B15 FIP6F13 FIP6A13 FIP20X2AC FIP6D15 FIP11F10 FIP5D8
Contextual Info: FIP Products Selection Guide August 1994 1994 NEC Electronics Inc. All rights reserved. Printed in U.S.A. FIP is a registered trademark of NEC Corporation. 1 NEC’s FIP Panels Perform the Crucial Role of Conveying Accurate Information 2 Features •

NEC 10F

Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Contextual Info: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

2SA1224

Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­

2SC1600

Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is

uPD78F0513A

Abstract: UPD78F0730 PG-FP5 Flash Memory Programmer uPD78F0376 uPD78F0515A GLASS BREAK sensor uPD78F0451 upD78F0503A mPD78F0475 mPD78F0500A
Contextual Info: For further information, please contact: NEC Electronics Corporation 1753, Shimonumabe, Nakahara-ku, Kawasaki, Kanagawa 211-8668, Japan Tel: 044-435-5111 http://www.necel.com/ [America] [Europe] [Asia & Oceania] NEC Electronics America, Inc. 2880 Scott Blvd.

NEC 41-A 002

Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
Contextual Info: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for

PD75268

Abstract: uPD75268 fip 450 P33C 3RD-6657A uPD752
Contextual Info: NEC NEC Electronics Inc. Description The /¿PD75268 is a low-cost, high-performance, single­ chip CMOS microcomputer containing CPU, ROM, RAM, I/O ports, several timer/counters, a FIP controller, vec­ tored interrupts, main and subsystem clocks, and serial

cd 2003 gp

Abstract: UPC1659G uPC1659 UPC1659A UPC1659B UPC165 Monolithic Amplifier NEC pc1659
Contextual Info: NEC/ SbE D CALIFORNIA NEC • b 4 2 7 4 m DDGSbE? TS1 MN EC C T - ^ OUTLINE DIMENSIONS • W IDE-BAND PERFO RM AN CE UPC1659A/B: 0.6 to 2.3 GHz (UPC1659G: 0.6 to 1.75 GHz) . . UPC1659A UPC1659B UPC1659G 1.5 GHz BANDWIDTH SILICON MMIC AMPLIFIER FEATURES

uPD7500* instruction set

Abstract: D7556 JPD7566ACS uPD7500 instruction set a diagram rice cooker microcomputer stop mode halt mode NEC retenti EVAKIT-7500 20ppd7556 uPD7500 instruction set
Contextual Info: NEC #iPD7556/56A/66/66A 4-Bit, Single-Chip CMOS Microcomputers With Comparator NEC Electronics Inc. Description The /JPD7556/66A and /JPD7566/66A are low-end ver­ sions of pPD7500 series products. These m icrocom put­ ers in corp orate a 4-bit com parator input and are useful

Contextual Info: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1

NE41607

Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e

NE85630

Abstract: nec03 NE68030 NE68130 2SC4227 2SC4228 NE68330 NEC0330 NE68030 NEC Mini-Mold
Contextual Info: NEC/ CALIFORNIA 5bE 3> NEC • hM2?mM 0002352 MbM MNECC 30 PACKAGE SUPER MINI-MOLD FEATURES OUTLINE DIMENSIONS Unite in mm • 40 % REDUCTION IN FOOTPRINT AREA (from SOT-23) OUTLINE 30 • 30 % REDUCTION IN HEIGHT (from SOT-23) «— 2 .1± 0.1 — : • 50% REDUCTION IN WEIGHT

NEC RELAY

Abstract: transister NEC fet nec V830 mcu NEC Rambus NEC V810
Contextual Info: NEC 半導体データ・ブック一覧表 NEC 半導体データ・ブック CD-ROM 一覧表（1999 年 4 月現在） 現在，NEC では下記の半導体データ・ブック CD-ROM を発行しています。 最寄りの NEC 半導体販売窓口までご請求ください。

UPG100B

Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Contextual Info: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)

NE98203

Abstract: 2SC1662 NE98200 NE98208 2SC1660 NE98241 S21E
Contextual Info: NEC/ CALIFORNIA 5bE D b427414 GODESSE =Î43 « N E C C - T -3 1 -Z NEC NE98200 NE98203 NE98208 NE98241 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • W ID E D Y N A M IC R A N G E The N E982 series of N PN silicon transistors features a high

2SC3542

Abstract: 2SC3541 NEL1320 NEL132081-12 1300 3d NEL130681 NEL1300 NEL130681-12 CNC12 NEL1306
Contextual Info: NEC/ CALIFORNIA NEC SbE J> m b427MlM 000254*=! 731 » N E C C 'T 'T b - W CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR NEL130681-12 NEL132081-12 OUTLINE DIMENSIONS FEATURES • H IG H LINEAR PO W ER AN D GAIN: NEL1306: P u b = 38 dBm, G iob = 7.5 dB TYP NEL1320: PidB = 43 dBm, GidB = 6 dB TYP

IC-3125

Abstract: NEC TUNER ICs
Contextual Info: DATA SHEET_ NEC BIPOLAR NALOG NTEGRATED IRCUIT 0PC2726T 1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The /¿PC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier.