NE901 Search Results

2SA1224

Abstract: E90115
Contextual Info: PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.5 GHz The NE901 Series of PNP silicon epitaxial transistors is designed for high frequency amplifier and high speed switch­

2SA1224

Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de­

Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

NE24483

Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

2SC1253

Abstract: 2SC1251 NEC k 2134 transistor NE74000 NE74014 NE74020 NE90115 CTO-39 2143E 1321E12
Contextual Info: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D 7 z ll- â S ' NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR DESCRIPTION AND APPLICATIONS FEATURES The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent in­

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

hitachi transistor fn651

Abstract: fn651 thyristor Q406 C745 TRANSISTOR ST C744 c311c c744 diodes ld 33 c744 A68KSA30X TELEVISION EHT TRANSFORMERS
Contextual Info: PA HITACHI 35TX10B/CZ41 31UX5B/CY45 31CX4B/CY44 27UX5B/C745 27CX4B/C744 27CX3B/C743 SERVICE MANUAL § No. 0039 R/C: ¡A 3 L X U CLU-851GR CLU-692GR CLU-691GR CAUTION: Before servicing this chassis, it is important that the service technician read the "Safety Precautions" and "Product Safety Notices" in this Service Manual.

Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES DESCRIPTION • HIGH GAIN BANDW IDTH PRO DUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for w ide bandw idth V H F and U H F am plifiers. Excellent intermodulation characteristics and low noise make the series

Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series