2SC2338
Abstract: NE567 NE56787 NE56708 NE56700 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567
Contextual Info: NEC/ CALIFORNIA 15E D bM27M14 0 0 0 14 05 b NE56700 NE56708 NE56787 NPN SILICON HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES • HIGH GAIN BANDWIDTH PRODUCT PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 25 VCEO Collector to Emitter Voltage
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b427414t-31-21ne56700ne56708+7ne56787ne5672sc2338s21etransistor 7350ic chip 5270ic ne567
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2SA1224
Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Contextual Info: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de
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00gs512ne90100ne90115ne74014+4ne9012sa1224nec japan 31671s955
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UPB565C
Abstract: UPB565 SO-64 T-45-19-13 nec tv
Contextual Info: NEC/ CALIFORNIA C 30E » bMETMlM DODSlOa 5 « N E C C 7 = y .r-j9 -j3 1 GHz HIGH SENSITIVITY PRESCALER UPB565C The UPB565C is a general purpose prescaler intended for use in PLL Digital Tuning System. It operates up to 1 GHz utilizing advanced bipolar process technology. This prescaler provides +64, +8, +4 and +2 division ratio, and can
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000e10upb565cpb565c34-6393/fax+4upb565so-64t-45-19-13nec tv
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2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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bm27414qddb354t3v-23ne021+102sc25702sc2570 transistortransistor 2sc2570ne02103ne021332sc1560ic 2sc2570ne02132ne02100ne02135
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