MTP36 Search Results

AN569

Abstract: MTP30N06V MTP36N06V
Contextual Info: MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

MTP36N06V

Abstract: AN569
Contextual Info: MOTOROLA Order this document by MTP36N06V/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MTP36N06V TMOS V Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 32 AMPERES 60 VOLTS RDS on = 0.04 OHM

MTP36N06E

Abstract: ts 8201 001 8202 rq
Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA MTP36N06E Designer’s Data Sheet Motorola Preferred Device T M O S E-FET ™ Power Field Effect Transistor T M O S PO W ER FET 36 A M P E R E S RDS on = 0.04 O H M 60 VOLTS N-Channel Enhancement-Mode Silicon Gate

MTP50N05E

Abstract: MTP25N10E MTP50N05 MTP40N06M MTP50N05EL SOT-123 MTP25N06L MTP40N06EL MTP25N05 MTP25N10
Contextual Info: - 290 - X£ §y € Vd s or Vd g Vg s % V (V) ±20 ±15 ±20 ±20 ±15 *± * MOT MOT MOT MOT MOT N N N MTP25N10 MTP25N10E MTP30N05E MOT MOT MOT N N N 100 ± 2 0 100 ± 2 0 50 ± 2 0 MTP3ÛNÛ6EL MTP30N08M MTP35NÛ6E MTP36NÛ6E MTP40N05E MTP40N06EL MTP40N06M

Contextual Info: MOTOROLA Order this document by MTP36N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP36N 06V TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

MTP36N06V

Abstract: TO-220AB/5 AN569 MTP30N06V
Contextual Info: MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP36N06V TMOS V Power Field Effect Transistor Motorola Preferred Devlc« N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

mcz33883eg

Abstract: MC33883HEG mcz3 MC33883 MCZ3388 mtp60n06 98ASB42343B
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33883 Rev 10.0, 10/2012 H-Bridge Gate Driver IC The 33883 is an H-bridge gate driver also known as a full-bridge pre-driver IC with integrated charge pump and independent high and low side gate driver channels. The gate driver channels are

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

MPT36N06V

Abstract: MC33253 MTP36N06V MTP60N06HD PC33253DW SOIC28 MTP60N06
Contextual Info: Order Number: MC33253/D Rev 3, 03/2001 MC33253 Advance Information Full Bridge Pre-Driver The MC33253 is a full bridge driver including integrated charge pump, two independent high and low side driver channels. The high and low side drivers include a cross conduction suppression

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

1N5994B

Contextual Info: LT1161 Quad Protected High-Side MOSFET Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 8V to 48V Power Supply Range Protected from – 15V to 60V Supply Transients Fully Enhances N-Channel MOSFET Switches Individual Short-Circuit Protection

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

mgb20n40cl

Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
Contextual Info: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to

C6198

Abstract: a17 c178 100v 12p quanta TMS 3617 CX20468-31 mtp42 cpu c644 100v 27p capacitor 100u 63V a70 4013 100 12p Quanta KT2
Contextual Info: 5 4 3 2 PCB Rev: A 1 Sch ver : 20040402_07 KT2 BLOCK DIAGRAM D PCB STACK UP LAYER 1 : TOP D PENTIUM-M / Montara-GM / ICH4-M LAYER 2 : GND LAYER 3 : IN1 CPU PENTIUM-M CPU THERMAL SENSOR LAYER 4 : IN2 GMT-781 478 Pins micro FC-PGA PAGE: 3 LAYER 5 : VCC 14.318MHz

CX20468-31

Abstract: BDM7 ATI M26P varistor k35 quanta foxconn varistor 520 k14 ISL6248 conexant cx20468 Socket AM2
Contextual Info: 1 2 3 4 5 6 7 8 PA2A-Block Diagram AC/BATT CONNECTOR A BATT CHARGER MAX1772 PG 29 VGA CPU SYSTEM POWER MAX1845 IO SC1470 CPUHCLK_200M CHANNEL A PG 15 Alviso PM GMCH VGA Memory 64/128 MB PG10 DDR2-SODIMM1 DDR2 SDRAM BGA PG 15 NEWCCLK_100M IDE (PATA) PG 22

Compal Electronics

Abstract: compal smd sot23-3 W32 UFCBGA479 compal la LA-3342P DIODE T25-4 PLC1045P R3381 PR210
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_GM/PM+ICH7-M core logic 3 3 2006-07-24 REV:1.0 4 4 Compal Secret Data Security Classification 2005/03/10 Issued Date 2006/03/10 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

compal

Abstract: Compal Electronics isl6260 PLC1045P MOBILE INTEL CALISTOGA isl6227caz ISL6260CRZ PJP18 PCBGA1466 MC910
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_GM/PM+ICH7-M core logic 3 3 2006-05-19 REV:0.1 4 4 Compal Secret Data Security Classification 2005/03/10 Issued Date 2006/03/10 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

AMD am3 socket pinout

Abstract: tv schematic diagram sony j14 amd socket am3 pinout schematic diagram lcd tv SONY T CON quanta 7233a PC97551 915GM schematic diagram tv sony Socket AM2
Contextual Info: 1 A 笔记本图纸QQ107203753 ED3-UMA DESIGN 2 RUN POWER SW 3 4 5 7 8 VER : B3B A AC/BATT CONNECTOR PG 37 BATT CHARGER PG 37 Dothan DC/DC +3V_SRC +5VSUS 478 Micro-FCPGA PG 34 6 PG 34 CPU VR CLOCKS PG 33 PG 17 PG 5, 6 FSB 133MHZ LVDS DDRII-SODIMM1 PG 15, 16

ATI-RS480M

Abstract: 6N131 LA-2771 ati sb400 NISSAN n14 1470804-2 drawing fuse N50 AMD Athlon 64 X2 4800 pin diagram Compal Electronics 2N151
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document AMD K8 with ATI RS480M+ATI SB400 3 3 2005-5-17 REV:0.3 4 4 Compal Secret Data Security Classification 2005/03/01 Issued Date 2005/04/06 Deciphered Date A B C Title Cover Page THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

SONY KNC 201 15

Abstract: knc 201 39 KNC 201 KNC 201 08 xo 405 mf tc144e KNC 201 35 conexant cx20493 reference design KNC 201 6 ga g31
Contextual Info: 1 2 3 4 5 6 7 8 ED3-UMA DESIGN A RUN POWER SW AC/BATT CONNECTOR A Dothan PG 37 DC/DC +3V_SRC +5VSUS 478 Micro-FCPGA PG 34 BATT CHARGER VER : F3B PG 37 CPU VR PG 34 CLOCKS PG 17 PG 33 PG 5, 6 FSB 133MHZ LVDS DDRII-SODIMM1 PG 15, 16 Panel Connector PG 18 Alviso 915GM/GML

la2841

Abstract: ICS9LP306 compal TPS2231 PLC1045P mini pcie connector 52 pin vertical Socket AM2 Compal Electronics G993 samsung electronics ba41
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_GM/PM+ICH7-M core logic 3 3 2005-12-15 REV:1.0 4 4 Compal Secret Data Security Classification 2005/03/10 Issued Date 2006/03/10 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL