TP36N Search Results

Contextual Info: ¿57 TYP E TP36N 05L S TP36N05LFI SGS-THOMSON TP36N06L TP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

transistor tc 144

Contextual Info: ¿57 TYP E TP36N06 S TP36N06FI S G S -T H O M S O N ¡U È T O « S T P 36 N06 S T P 3 6 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: MOTOROLA Order this document by TP36N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP36N 06V TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

Contextual Info: ¿57 TYP E TP36N 05L S TP36N05LFI TP36N05L TP36N05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: TP36NE06 TP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYP E V dss RDS on Id TP36NE06 TP36NE06FP 60 V 60 V < 0 .0 4 0 Q. < 0 .0 4 0 Q. 36 A 20 A . TYPICAL Ros(on) =0.032 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

TP36N

Abstract: DIODE RK 306
Contextual Info: TP36NE06 TP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYPE V TP36N E06 TP36NE06FP dss 60 V 60 V R D S o n Id < 0.040 Q. < 0.040 Q, 36 A 20 A . TYPICAL RDs(on) = 0.032 C2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED

12N60FI

Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”