MTP2P45
Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5
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o-218o-22qabmtm2p50204aa+13mtp2p50220abmtm2p45mtp2p45mtp4n90mtp6n6mtp8n45irf840 selection guidemtp3n80mth8p20mtp3n6mtp1n95mtp2n85
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MTP8P25
Abstract: c3709 MTM8P25 AN569 SILICON SWITCHING DIODE MTM8P
Contextual Info: Order this data sheet by MTM8P25/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TM 8P25 M TP8P25 Designer's Data Sheet Pow er Field Effect Transistors P-Channel Enhancem ent M ode Silico n Gate T M O S T M O S POW ER FETs 8 AM PERES rDS on = 2 O H M S 250 VO LTS
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mtm8p25/dmtm8p25mtp8p25mk145bp+6c37095ds370c3709an569silicon switching diodemtm8p
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MTP4N20
Abstract: MTP8N18 MTP5N40 mtp8n20 mtp4n35 IRF612 MTH8P20 power mosfets to 204aa T0-204AE MTM2P50
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 MTM2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5 MTM5P20
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o-218o-22qabmtm2p50204aa+13mtp2p50220abmtm2p45mtp2p45mtp4n20mtp8n18mtp5n40mtp8n20mtp4n35irf612mth8p20power mosfets to 204aat0-204ae
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8P08
Abstract: MTP8P08 mtp8p
Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTM8P08 MTM8P10 MTP8P08 MTP8P10 Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e se T M O S P o w e r F E T s are d esig n ed fo r m ed ium vo ltag e ,
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mtm8p08mtm8p10tq-204aa21a-04+4o-220ab8p08mtp8p08mtp8p
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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MTM20N08
Abstract: MTM35N06 IRF141 IRF143 MTM10N06 MTM55N10 MTM35N05 MTM60N05 IRF150 MTM10N08
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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IRF250a
Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15
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MTM20N08
Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08
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MTM6N60
Abstract: MTM6N85 MTM7N12 MTM7N20 MTM7N45 MTM8N08 MTM8N12
Contextual Info: - 283 f §Ü g tt Vds or % Vg s V Iq s s Pd Id Id s s Vg s (V) (*) (A) th) M 4# ft D s (on) Vd s = '14 ( T a = 2 5 iC ) Io(on) g fs Ciss Coss Crss VG S =0 Vg s * /CH * /CH Vd g * (Ta= 25'C) ma x min CnA) Vg s (V) Vd s (V) Cm a) (V) (max) Id (mA) (V) ♦typ
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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MTP12N10 pin configuration
Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 * Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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MTM13N50E
Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”
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MJ802 EQUIVALENT
Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110* Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •
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mj16110mjw16110tip73btip74+16tip74atip74btip75tip75atip75btip75cmj802 equivalent2n3055 equivalent transistor numbermj4502 equivalentbd131 equivalentbd139 equivalentst t8 3580mj15025* equivalentmj3055 equivalentbdx37 equivalentmje340 equivalent
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MTP3055A
Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08
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SLO-SYN
Abstract: M093-FC07 Superior Electric M093-FC07 stepping motor diagram* M093-FC07 Using Power MOSFETs in Stepping AN876 half stepping drive technique M093-F007 floppy Stepping Motors diagram superior electric N4002 diode
Contextual Info: c AN-876 M O TO R O LA Semiconductor Products Inc. Application Note USING POWER MOSFETS IN STEPPING MOTOR CONTROL Prepared by Curtis D. Moyer Motorola. Inc. Phoenix, Arizona S te p p in g m o to r co n tro l te c h n iq u e s an d c irc u its u tilizin g Pow er M O SFETs driven from C M O S Integrated Circuits are
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an-876an876/dslo-synm093-fc07+8superior electric m093-fc07stepping motor diagram* m093-fc07using power mosfets in stepping an876half stepping drive techniquem093-f007floppy stepping motors diagramsuperior electricn4002 diode
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bd139 equivalent transistor
Abstract: transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 TRANSISTOR REPLACEMENT GUIDE pin configuration transistor bd140 transistor bd610 transistor equivalent book 2sc2238 ST T8 3580
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE16106 Data Sheet Designer's NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • POWER TRANSISTORS
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mje16106tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488bd139 equivalent transistortransistor 2sa1046motorola transistor cross referencetransistor equivalent book 2sc2073transistor 40251transistor replacement guidepin configuration transistor bd140transistor bd610transistor equivalent book 2sc2238st t8 3580
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719
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MTP8P25
Abstract: 8P25M mtp8p
Contextual Info: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M TM 8P25 M TP 8P 25 Advance Information P o w e r Field E ffe ct T ra n sisto rs P-Channel Enhancem ent-M ode Silicon G ate TM O S TM O S POWER FETs 8 AMPERES These TM O S Power FETs are desig n ed fo r m e d iu m voltag e ,
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8p20
Abstract: MTM8P20
Contextual Info: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M TH 8P 18 M TH 8P 20 M TM 8P18 M TM 8P20 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TMOS These TM O S P ow er FETs are desig n ed fo r m e d iu m voltage,
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MJ16110
Abstract: MJW16110 IRFD9120 mtp25n06 MJE210 MTP12N10 MTP8P10 MUR105 MUR870
Contextual Info: ON Semiconductort MJ16110 * MJW16110 * NPN Silicon Power Transistors SWITCHMODEt Bridge Series *Not Recommended for New Design . . . specifically designed for use in half bridge and full bridge off line converters. • • • • • • • • POWER TRANSISTORS
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mj16110mjw16110r14525mj16110/d+7irfd9120mtp25n06mje210mtp12n10mtp8p10mur105mur870
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