MTP8P25
Abstract: c3709 MTM8P25 AN569 SILICON SWITCHING DIODE MTM8P
Contextual Info: Order this data sheet by MTM8P25/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TM 8P25 M TP8P25 Designer's Data Sheet Pow er Field Effect Transistors P-Channel Enhancem ent M ode Silico n Gate T M O S T M O S POW ER FETs 8 AM PERES rDS on = 2 O H M S 250 VO LTS
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mtm8p25/dmtm8p25mtp8p25mk145bp+6c37095ds370c3709an569silicon switching diodemtm8p
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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MTM6N60
Abstract: MTM6N85 MTM7N12 MTM7N20 MTM7N45 MTM8N08 MTM8N12
Contextual Info: - 283 f §Ü g tt Vds or % Vg s V Iq s s Pd Id Id s s Vg s (V) (*) (A) th) M 4# ft D s (on) Vd s = '14 ( T a = 2 5 iC ) Io(on) g fs Ciss Coss Crss VG S =0 Vg s * /CH * /CH Vd g * (Ta= 25'C) ma x min CnA) Vg s (V) Vd s (V) Cm a) (V) (max) Id (mA) (V) ♦typ
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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MTP8P25
Abstract: 8P25M mtp8p
Contextual Info: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M TM 8P25 M TP 8P 25 Advance Information P o w e r Field E ffe ct T ra n sisto rs P-Channel Enhancem ent-M ode Silicon G ate TM O S TM O S POWER FETs 8 AMPERES These TM O S Power FETs are desig n ed fo r m e d iu m voltag e ,
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