MTH13N50
Abstract: 3N50 motorola MTH13N50 13N50 MTH15N40 MTH13N45 transistor 13n50 5N35 MTM4N35 DS3651
Contextual Info: P.O. BOX 20912 • PHOENIX, ARIZONA 85036 MTH13N45 MTH13N50 MTH15N35 MTH15N40 D esign er’s D ata Sheet 13 and 15 AMPERES N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR N-CHANNEL TMOS POWER FETs These TMOS Power FETs are designed for medium voltage,
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13n4513n5015n3515n40+10mth13n45/dmth13n503n50motorola mth13n50mth15n40mth13n45transistor 13n505n35mtm4n35ds3651
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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IRF450 transistor
Abstract: irf450 mosfet 452 IRF452 mosfet IRF450
Contextual Info: MOTOROLA SEMICONDUCTOR IRF450 IRF451 IRF452 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V d SS rDS on >D IRF450 500 V 0.4 n 13 A IRF451 450 V 0.4 n 13 A IRF452 500 V 0.5 n 12 A T h e s e T M O S P o w e r FETs are d es igne d fo r high v o ltag e, high
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irf450irf451irf452irf450 transistor+2mosfet 452mosfet irf450
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MTH13N50
Abstract: 218AC MTH6K MTH20P08 MTH35N06 MTH35N15 MTH50N05E MTH8N90 TO218AC MTH15N35
Contextual Info: - m m £ tt * Vos or € £ Vg s V W. (Ta=25‘ C) ÍD Ig s s Pd Vg s Jd s s th) xi fà ft 1D S ( o n ) Vd s = 'te (V) * /CH * /CH (A) (W) (nA) Vg s (V) (HA) Vd s (V) min m ax (V) (V) g fs iD(on) Ciss Coss Crss & m m n V g s =0 (max) Id (mA) *typ (0) Vg s
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mth6k90o-218acmtk8p18t0-218ac+14mth8p20hth13n45mth40n05mth40n06mth13n50218acmth6kmth20p08mth35n06mth35n15mth50n05emth8n90to218acmth15n35
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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20n1535n05mje13002 to92ur3060+5an803 motorola2n6823isolated dc-dc mc34063mje12007motorola switchmode 1 special
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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13n50
Abstract: TH13N45 Diode KD 506
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 1 3N 4 5 M T H 1 3N 5 0 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhan cem en t-M ode S ilic o n G ate T M O S TM O S POWER FETs 13 AMPERES These TM O S P ow er FETs are designed fo r h ig h vo ltag e , high
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MTH13N50
Abstract: MTH40N10 MTH7N50 MTH15N20 MTH25N10 MTH35N15 MTH35N05 MTH25N08 mth5n100 mth7n50 Transistor
Contextual Info: POWER TRAN SISTO RS — TM O S PLASTIC continued Plastic TM OS Power MO SFETs — TO-218AC G D S rDS(on) @ <D V BR(DSS) (Volts) Min (Ohms) Max (Amp) 1000 3 2.5 Device 950 900 550 500 450 400 350 MTH5N100 'D(Cont) (Amp) M ax PD @ Te = 25°C (W ans) M ax 5
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o-218acmth5n100mth5n95mth6n90+14mth6n85mth6n60mth8n60mth6n55mth8n55mth7n50mth13n50mth40n10mth15n20mth25n10mth35n15mth35n05mth25n08mth7n50 transistor
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MTH13N50
Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:
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mje8502ao-220ab/to-220mjf16010ao-254+12mjf16018mjf16206mth13n50mtm565mrf531mm3220mm1758mm3904mm3004mth5n100mtm26n40emth7n50
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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