218AC Search Results

S6025

Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
Contextual Info: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more

Contextual Info: _^ 2 • 4305571 0DS4425 ÛSE ■ HAS RFH30N12 RFH30N15 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1991 Package Features TO-218AC • 30A , 120V and 150V TOP VIEW • rp g to n = 0 .0 7 5 ÎÎ • SOA is Power-Dissipation Limited

Contextual Info: m H a r r i 0054414 7flt. • HAS . s . . f ^ _ . . R F H 2 5 N R F H 2 5 N . ^ 1 2 8 N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features TO-218AC TOP VIEW • 25A , 180V and 2 0 0V • rDSf011) = 0 .1 5 ft • S O A is P ow er-D issipation Lim ited

HGTH12N40C1D

Abstract: HGTH12N40E1D HGTH12N50C1D HGTH12N50E1D G12N40E1D
Contextual Info: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR

Contextual Info: ASSESS? RURH3040CC, RURH3050CC, RURH3060CC 30A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175°C Rated Junction Temperature CATHODE (FLANGE)

Contextual Info: ASSESS? RURH3070CC, RURH3080CC, RURH3090CC, RURH30100CC ii 1 9 9 5 30A, 700V - 1000V U ltrafast Dual Diodes Features Package • Ultrafast with Soft Recovery <110ns • Operating Temperature. . . . +175°C • Reverse Voltage Up to . ,1000V JEDEC TO-218AC

G20N50c

Abstract: g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D
Contextual Info: HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs

UR3040PT

Abstract: 15a42 1560c transistor lrw
Contextual Info: MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC H A R R IS S E M I C O N D U C T O R 15A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC • +175°C Rated Junction Temperature

MUR3040PT

Abstract: MUR3050PT MUR3060PT RURD1540 RURD1550 RURD1560 2774.1 RUR01560
Contextual Info: M UR3040PT M UR3050PT M UR3060PT HARRIS • H3QE271 0G424G7 ñb3 I IHAS HARRIS SEMICOND SECTOR 15A Ultrafast Dual Diode With Soft Recovery Characteristic 5bE D May 1992 • r - ; 2. 3 - 0 7 Package Features RURD1540 RURD1550 RURD1560 TO-218AC TOP VIEW U ltrafast w ith S o ft R eco very C haracteristic

"Power Diode" 200V 30A

Abstract: RURD3010 RURD3015 RURD3020 RURD3040 diode 200v 30a 200V30A 200V 30A TRANSISTOR
Contextual Info: H A RR IS S E M I C O N D SE CT OR RURD3010 RURD3015 RURD3020 HARRIS SbE D • IHAS 4 3 0 2 27 1 G G 4 2 4 1 2 1SD 30A Ultrafast Dual Diode With Soft Recovery Characteristic M ay 1991 TO-218AC TOP VIEW Ultrafast with Soft Recovery Characteristic trr < 45ns

G20N50c

Abstract: G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1
Contextual Info: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR

pic 16 f 888

Abstract: 12N50c
Contextual Info: CU H A R R IS HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IG B T s with Anti-Parallel Ultrafast D iodes Aprii 1995 Features Package • 12A, 400V and 500V J E D E C TO-218AC • V C E O N : 2 -5 V M a x • T FALL: 1 m s , 0 .5 ^ 8

G20N50c

Abstract: 20N50C1D GE 639 1D50C "parallel diode" 20N50E 443 20N 20n50c
Contextual Info: i \M J H A R R I S semiconductor H G TH 20N 40C 1D , H G TH 20N 40E1D , H G TH 20N 50C 1D , H G TH 20N 50E 1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aphi 1995 Features Package • 20A, 400V and 500V • ^ C E O N JEDEC TO-218AC

TO-218AC

Abstract: TO218AC
Contextual Info: Power Packages TO-218AC 3 LEAD JEDEC TO-218AC PLASTIC PACKAGE E INCHES A A1 ØP Q H1 D TERM. 4 L1 b1 MIN MAX MIN MAX NOTES A 0.185 0.195 4.70 4.95 - A1 0.058 0.062 1.48 1.57 - b 0.049 0.053 1.25 1.34 3, 4, 5 b1 0.070 0.080 1.78 2.03 3, 4 c 0.018 0.022 0.46

S4004F1

Abstract: S1035K s8065 S4008L S0606F1 S805SR S2055M scr S1015L S6025L S606SK
Contextual Info: 1 • >€oo<5 ^ ß jä Am TECCOR ELECTRONICS, INC. A SIEBE COMPANY TO-218AC 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 TO-92 TO -202AB TO -218X THERMOTAB TO -220AB SCRs 1-70 Amps GENERAL INFORMATION T h e T e cco r lin e o f S C R 's fe a tu re s g la s s p a s s iv a te d d e v ic e

g10n50c1

Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs

transistor BU508D

Abstract: BU508D TO-218 Package TO-218AC Package
Contextual Info: Silicon Power Transistor BU508D Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of large screen colour deflection circuits. Specification Fetaures : F High Voltage NPN Silicon Power Transistor F 8 Amp / 1500 V device in TO-218AC package

RFH10N45

Abstract: RFH10N50
Contextual Info: RFH10N45 RFH10N50 3J H a r r i s N -Channel Enhancement Mode Power Field Effect Transistors August 1991 Features • Packages TO-218AC TOP VIEW 10A, 450V and 500V • rDS on = 0 -6 « • SOA is P o w e r-D issip atio n Lim ited I SOURCE DRAIN L-*(C) • Nanosecond S w itching Speeds

transistor A2

Abstract: RURH3060CC RURH3040CC RURH3050CC
Contextual Info: RURH3040CC, RURH3050CC, RURH3060CC S E M I C O N D U C T O R 30A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175oC Rated Junction Temperature

MUR3015PT

Abstract: MUR3010PT MUR3020PT RURH1510CC RURH1515CC RURH1520CC TO-218AC
Contextual Info: MUR3010PT, RURH1510CC, MUR3015PT, RURH1515CC, MUR3020PT, RURH1520CC S E M I C O N D U C T O R 15A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 30ns JEDEC TO-218AC • +175oC Rated Junction Temperature

S2055

Abstract: s6015l S4004F1 s4010l S0535W S8055R S6004F1 S4004 S4008F S2055W
Contextual Info: TECCOR ELECTRONICS, INC. A SIEBE COMPANY TO-218AC 1801 H U R D D RIVE IR V IN G , T E X A S 7 5 0 3 8 -4 3 8 5 P H O N E 2 1 4 /5 8 0 - 1 5 1 5 FAX 2 1 4 /5 5 0 - 1 3 0 9 TO-92 TO-202AB THERMOTAB TO-220AB SCRs 1-70 Amps G E N E R A L IN F O R M A T IO N

MT2 Q4025P

Abstract: Triac MT2 Q6025P MT2 Q6025P Q4040K7 Q6040W7 Q6025R6
Contextual Info: TECCOR ELECTRONICS, INC. TO -220AB THERMOTAB A SIEBE COMPANY 1801 H UR D D R IV E IR V IN G , T E X A S 7 5 0 3 8 -4 3 8 5 P H O N E 2 1 4 /5 8 0 -1 5 1 5 FAX 2 1 4 /5 5 0 -1 3 0 9 TO -218X MT1 FASTPAK TO-218AC ALTERNISTOR TRIACS 15 - 40 AM PS GENERAL DESCRIPTION

HGTH12N40E1D

Abstract: HGTH12N40C1D HGTH12N50C1D HGTH12N50E1D 50uh
Contextual Info: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs

MUR3015PT

Abstract: TO-218AC Package MUR3010PT MUR3020PT RURH1510CC RURH1515CC RURH1520CC TO218AC
Contextual Info: MUR3010PT, RURH1510CC, MUR3015PT, RURH1515CC, MUR3020PT, RURH1520CC S E M I C O N D U C T O R 15A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 30ns JEDEC TO-218AC • +175oC Rated Junction Temperature