transistor Bf 966
Abstract: MRF486 2204B 1N4997 221A-04 RF POWER TRANSISTOR NPN MOTOROLA LINEAR HF arco 429
Contextual Info: MO T O R O L A SC XSTRS/R 4bE T> F b3b72S4 00=14703 S MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF486 The R F Line NPN SILICON RF POWER TRANSISTOR 40 W (PEP) - 30 MHz . . d e s ig n e d p rim a rily fo r ap p licatio n as a h ig h -p o w e r linear a m p lifie r fro m 1.5 to 30 M H z, in single s id eb an d m o b ile , m a rin e
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mrf486o-220abb3b72s4transistor bf 966+62204b1n4997221a-04rf power transistor npnmotorola linear hfarco 429
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Contextual Info: <$Emi- 2onclu<2toi ^Products., Una. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MRF486 The RF Line NPN SILICON RF POWER TRANSISTOR . . designed primarily for application as a high-power linear
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mrf486o-220ab-30db-30mhi+2mil-std-13112204b
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MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2n28762n31372n33752n3553+162n36322n37332n39242n39262n39272n3948mrf660mrf485ktc1969mrf150mpmrf4962sc2029bmrf648mrf646mrf429mpmrf648 data sheet
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042c1
Abstract: 2S090 SSP62 mrf486 2S0882 2sc2906 2S0898 042C3 B0329 THA13
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 TRM5504 TRM5504 TRM5504 TRM6014 TRM6014 TRM6014 TRM6504 TRM6504 -:-~~~g~: 25 30 35 40 45 50 TRM7014 TRM7014 TRM7504 TRM7504 TRM7504 TRL8014 TRL8014 TRL8014 2:;C;3001 2SC2906AK 2SC2906AM 2S0141 2S0141
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2sc643a2sc1892s015302s0898+14trm2014trm2504trm3014trm3504trm4014042c12s090ssp62mrf4862s08822sc2906042c3b0329tha13
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN SILICON RF POWER TRANSISTOR . . . d esig n e d p rim a rily fo r ap plicatio n as a high-pow er linear am p lifier fro m 1.5 to 30 M Hz, in sin g le sid eb and m o b ile, m arine and b ase station equip m en t.
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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atv5030atv5090batv6031atv6060h+15atv7050bal99lt1bas16lt1bas21lt1bav70lt1bav74lt1mled96brx49 scrmrf549mrf660mrf548mmbr2857lt1cr2428mpf3822mrf548 motorola
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+72n5032n5160 motorolabf431bfr96hy 1906 transistorjo2015kd 2060 transistor
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2sd898 hitachi
Abstract: KT816A 2SC2906A BUV36 2SD90 BUV36A 2n6095 2N5700 MJE8500 THB13
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Max (A) (V) ON) PD hFE Min *T (HZ) r 'CBO Max (A) Max (s) (CE)ut Max (Ohms) Top«r Max Package Style (°C) Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . -15 . .
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sdt801sdt7012sc31782sc3059+13mje1320buv36a2sd13012sd897a2sd898 hitachikt816a2sc2906abuv362sd902n60952n5700mje8500thb13
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0hf400hf600hf806fp10+126f10070hf10uaa2001mc8500micromodule m68mm191n938874als6432n6058mc1450262n5160 motorolamc3340 equivalentpn3402
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