MMIC POWER AMPLIFIER HEMT Search Results

RF Power Amplifier 125KHz

Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

MMIC X-band amplifier

Contextual Info: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF

ALH102C

Abstract: Low Noise HEMT ALH102 AL-H ALH IC
Contextual Info: TRYw Superior Performance from the Latest MMIC Technology Low Noise HEMT MMIC Amplifier ALH102C Darlington Amplifier Series • RF Frequency: 2 to 20 GHz • Low Noise Figure < 3.5 dB • 10 dB Gain • Unconditionally Stable • Low DC Power Consumption •

MCH185A101JK

Abstract: SGL-0622Z LL1608-FS56NJ TAJB105KLRH
Contextual Info: SGL-0622Z SGL-0622Z 5MHz to 4000MHz Low Noise MMIC Amplifier Silicon Germanium 5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: QFN, 2x2 Product Description Features The SGL-0622Z is a low noise, high gain MMIC LNA designed for low power

amplifier TRANSISTOR 14 GHZ

Abstract: EHT09218
Contextual Info: 27 - 31 GHz GaAs High Power Amplifier MMIC 27 - 31 GHz HPA Preliminary Data Sheet • • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier Input/Output matched to 50 Ω Frequency range: 27 GHz to 31 GHz Gain > 11 dB

amplifier TRANSISTOR 12 GHZ

Abstract: amplifier TRANSISTOR 14 GHZ transistor amplifier 3 ghz
Contextual Info: 27 - 31 GHz GaAs High Power Amplifier MMIC 27 - 31 GHz HPA Preliminary Data Sheet • • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier Input/Output matched to 50 Ω Frequency range: 27 GHz to 31 GHz Gain > 11 dB

Contextual Info: SGL0622Z SGL0622Z 5MHz to 4000MHz Low Noise MMIC Amplifier Silicon Germanium 5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM Package: QFN, 2x2 Product Description Features The SGL0622Z is a low noise, high gain MMIC LNA designed for low power single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection

SGL-0622Z

Abstract: SGL0622ZPCK1 MCH185A101JK SGL0622ZSQ
Contextual Info: SGL0622Z SGL0622Z 5MHz to 4000MHz Low Noise MMIC Amplifier Silicon Germanium 5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM Package: QFN, 2x2 Product Description Features The SGL0622Z is a low noise, high gain MMIC LNA designed for low power single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection

HEMT Amplifier

Abstract: amplifier TRANSISTOR 12 GHZ MMIC POWER AMPLIFIER hemt "Marking 12" mmic mmic "Marking 12" marking hpa GaAs 12 GHZ gain 2.4 ghZ rf transistor
Contextual Info: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm

bond pull test

Abstract: HEMT marking P
Contextual Info: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm

Contextual Info: T485BMPA1 GaAs 38 GHz Medium Power Amplifier MMIC • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 13 dB • P i dB > 1 7 dB m • Psat > 19 dBm

Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB Cree Microwave c08bl242x C08BL242X-5UN-X0T
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA5585025F

Abstract: power transistor gaas x-band CMPA5585025F-TB
Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA0060002D 2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplifier Cree’s CMPA0060002D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon

vco 10GHz

Abstract: 10GHz OSCILLATOR RFVC1801 VCO 5GHz 10GHZ wideband vco mmic
Contextual Info: RFVC1801 RFVC1801 Wideband MMIC VCO with Buffer Amplifier, 5GHz to 10GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ Package: QFN, 4mmx4mmx1.1mm Frequency and Output Power versus V TUNE VS=5V, T=25°C 12 6 11 Features 5 Evaluation Board 10 4 9

transistor 2xw

Abstract: 38GHz T485B S11 INFINEON power transistor gaas
Contextual Info: T485B_MPA_2 GaAs 38GHz Medium Power Amplifier MMIC • 2 Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ohm • Frequency range: 35 GHz to 38 GHz • Gain > 12 dB • P-1dB > 20 dBm • Psat > 22 dBm chip size: 2.2 mm x 1.1 mm

Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB JESD22 A114D
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium