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    "15 GHZ" POWER AMPLIFIER 41DBM Search Results

    "15 GHZ" POWER AMPLIFIER 41DBM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    "15 GHZ" POWER AMPLIFIER 41DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TGA2216 0.1 – 3.0GHz 12W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare Product Features Functional Block Diagram          Frequency Range: 0.1 – 3.0GHz PSAT: 41dBm at PIN = 27dBm


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    PDF TGA2216 41dBm 27dBm 34dBm 120mA 33dBm/tone: -30dBc -35dBc

    3570 1301 054

    Abstract: 3570 1301 "15 GHz" power amplifier 41dBm 3570 1301 053 Eudyna Devices power amplifiers ED-4701 FMM5822X 3570 1301 051 40938 power amplifier mmic
    Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three


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    PDF FMM5822X 41dBm FMM5822X 3570 1301 054 3570 1301 "15 GHz" power amplifier 41dBm 3570 1301 053 Eudyna Devices power amplifiers ED-4701 3570 1301 051 40938 power amplifier mmic

    power amplifier mmic

    Abstract: No abstract text available
    Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three


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    PDF FMM5822X 41dBm FMM5822X power amplifier mmic

    ED-4701

    Abstract: FMM5822X "15 GHz" power amplifier 41dBm power amplifier mmic
    Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three


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    PDF FMM5822X 41dBm FMM5822X ED-4701 "15 GHz" power amplifier 41dBm power amplifier mmic

    3570 1301

    Abstract: 3570 1301 053 3570 1301 051
    Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω Device photo DESCRIPTION


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    PDF FMM5822X 41dBm FMM5822X 3570 1301 3570 1301 053 3570 1301 051

    3570 1301 054

    Abstract: FMM5822X 3570 1301 ED-4701 MTTF class E power amplifier 13.56 40938 power amplifier mmic
    Text: FMM5822X K-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.5 dBm Typ. •High Linear Gain; GL = 22 dB(Typ.) •Frequency Band ; 17.5 - 20.0 GHz •High Linearity ; OIP3 = 41dBm •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5822X is a power amplifier MMIC that contains a three


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    PDF FMM5822X 41dBm FMM5822X 3570 1301 054 3570 1301 ED-4701 MTTF class E power amplifier 13.56 40938 power amplifier mmic

    Untitled

    Abstract: No abstract text available
    Text: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000 MHz to 2800 MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz High OIP3/P1dB=+41dBm/ 28dBm  Single +5V Supply  Small 28-Pin, 6.0mmx6.0mm, MCM  Power-up Programming GND


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    PDF RFDA2046 RFDA2046Digital 2000MHz 2800MHz 28-Pin, 41dBm/ 28dBm GRM155R71C104KA88D GRM155R61A105KE15D RMC1/16SJPTH

    MMIC X-band amplifier

    Abstract: No abstract text available
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


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    PDF RFHA5966A RFHA5966AX 41dBm RFHA5966A Radar023 1N4148, DS111023 MMIC X-band amplifier

    RF Power Amplifier 125KHz

    Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
    Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF


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    PDF RFHA5966AX RFHA5966A 4500m 4000m 41dBm RFHA5966A 1N4148, RF Power Amplifier 125KHz 1n4148 die GAAS FET AMPLIFIER x-band 10w x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm

    RF3315

    Abstract: IPC-SM-782
    Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features „ „ „ „ 1 2 3 RF OUT „ 4 GND „ 200MHz to 3GHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at 900MHz


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    PDF RF3315 RF3315Broadband 200MHz 41dBm 900MHz 25dBm RF3315 DS091103 IPC-SM-782

    C1005C0G1H101JT000F

    Abstract: Murata Moca 0402CS-5N6XJL
    Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features     1 2 3 RF OUT  GND  4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at


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    PDF RF3315Broadband RF3315 200MHz 2200MHz 41dBm 900MHz 25dBm 900MHz RF3315 C1005C0G1H101JT000F Murata Moca 0402CS-5N6XJL

    Untitled

    Abstract: No abstract text available
    Text: RF3315 RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND Package Style: SOT89 Features     1 2 3 RF OUT  GND  4 200MHz to 2200MHz +41dBm Output IP3 18dB Gain at 900MHz +25dBm P1dB 2.5dB Typical Noise Figure at


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    PDF RF3315 RF3315Broadband 200MHz 2200MHz 41dBm 900MHz 25dBm RF3315 DS120530

    52E5

    Abstract: TriQuint RO4003 TGA4530 "15 GHz" power amplifier 41dBm
    Text: TGA4530-SM 17 - 21 GHz High Output TOI Packaged Amplifier Key Features • • • • • • • • Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm Nominal P1dB 12 dB Nominal Return Loss Bias 6 V @ 825 mA 4 x 4 QFN with 20 leads


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    PDF TGA4530-SM 41dBm 825mA TGA4530 21GHz 52E5 TriQuint RO4003 "15 GHz" power amplifier 41dBm

    Fujitsu GaAs FET application note

    Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
    Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was


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    PDF fcs64 magS22 angS22 Fujitsu GaAs FET application note atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm

    Untitled

    Abstract: No abstract text available
    Text: MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25µm GaAs pHEMT Technology 8.5 – 10.8 GHz full performances Frequency Range Saturated Output Power > 11W PAE = 32% - 43% Small Signal Gain > 21 dB VG VD Bias: Vd = 8.5V, Id = 2.6A, Vg = -0.43V Typ.


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    PDF MECX10W-2 MECX10W-2 22dBm

    Untitled

    Abstract: No abstract text available
    Text: SPA-120-41-01-SMA DATA SHEET 41 dB Gain Medium Power High Gain Amplifier at 1 Watt Operating From 8 GHz to 12 GHz with SMA SPA-120-41-01-SMA is a 1 W X-band high gain coaxial power amplifier in the 8 to 12 GHz frequency range. The amplifier offers 30 dBm of P1db min and


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    PDF SPA-120-41-01-SMA SPA-120-41-01-SMA -gain-amplifier-1watt-spa-120-41-01-sma-p

    Untitled

    Abstract: No abstract text available
    Text: TGA2527-SM Ku-Band Power Amplifier Applications •  Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features          Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 41 dBm Power: 31.5 dBm Psat, 30 dBm P1dB


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    PDF TGA2527-SM TGA2527-SM 41dBm 20dBm

    "15 GHz" power amplifier 41dBm

    Abstract: No abstract text available
    Text: TGA2527-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 41 dBm Power: 31.5 dBm Psat, 30 dBm P1dB Gain: 25 dB Return Loss: 10 dB NF: 7.5 dB


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    PDF TGA2527-SM TGA2527-SM 41dBm 20dBm "15 GHz" power amplifier 41dBm

    Untitled

    Abstract: No abstract text available
    Text: TGA2527-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 41 dBm Power: 31.5 dBm Psat, 30 dBm P1dB Gain: 25 dB Return Loss: 10 dB NF: 7.5 dB


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    PDF TGA2527-SM TGA2527-SM 41dBm 20dBm

    "15 GHz" power amplifier 41dBm

    Abstract: AN0017 MO-220
    Text: Advance Information: AI1013 QFN Packaged 13-15.5GHz High Power Amplifier D1 GND D2 NC D3 NC D4 GND GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 NC 3 22 NC GND 4 21 GND RFIN 5 20 RFOUT GND 6 19 GND NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 GND NC


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    PDF AI1013 AI10131270 ES-CHA6252-QFG "15 GHz" power amplifier 41dBm AN0017 MO-220

    Untitled

    Abstract: No abstract text available
    Text: CHA6252-QFG 13-15.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6252-QFG is a four stages monolithic GaAs high power circuit that produces more than 2 Watt output power. It is designed for commercial communication


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    PDF CHA6252-QFG CHA6252-QFG 41dBm 32L-QFN5x5 DSCHA6252-QFG2355

    Untitled

    Abstract: No abstract text available
    Text: TGA2583 2.7 – 3.7GHz 10W GaN Power Amplifier Applications • Commercial and military radar Product Features Functional Block Diagram      Frequency Range: 2.7 – 3.7GHz PSAT: 40dBm at 25V PAE: 54% Small Signal Gain: 33dB Bias: VD = 25-32V CW or Pulsed , IDQ = 175mA, VG


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    PDF TGA2583 40dBm 5-32V 175mA, TGA2583 TQGaN25)

    Untitled

    Abstract: No abstract text available
    Text: MAGX-011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz Features •      Preliminary - Rev. V1P Functional Schematic 28 V Operation >55% High Drain Efficiency 50 Ω Input / Output Matched Lead-Free 5 x 6 mm 8-lead PDFN Package Halogen-Free “Green” Mold Compound


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    PDF MAGX-011087 MAGX-011087 MAAP-011068

    AM003040SF-2H

    Abstract: No abstract text available
    Text: High Power Amplifier Module 10 – 3000MHz, 22dB, 10 Watts AM003040SF-2H January 2011 REV 4 DESCRIPTION AM003040SF-2H is an ultra-broadband High Power Amplifier designed for instrumentation, communication and Jamming applications. It operates from 10MHz to 3000MHz and typically delivers more than 10 watts 40dBm CW


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    PDF 3000MHz, AM003040SF-2H AM003040SF-2H 10MHz 3000MHz 40dBm) 3000MHz 41dBm,