MMBT3569 Search Results

Contextual Info: MMBT3569 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)80 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

uei 350

Abstract: K 3567 MMBT3568 MMBTA05 MMBTA06 MMBTA42 MMBTA43 mmbt
Contextual Info: Surface Mount Transistors Medium Power—NPN VCER* VCEO V Min V eb o (V) Min MMBT3568 TO-236 (49) 80 60 5 Its MMBT3700 TO-236 (49) 140 Type No. Case Style 80 7 »T Ic e s * C0b *oft NF VCE(SAT) V b E(SAT) Test Process (MHz) @ lc •cBOa VCB hre lc & VCE

PN222A

Abstract: 2N2222A TO-92 BSR14 2N3904 TO-92 type PN544 TN2219 2NS904 MPS6574 NPN transistor 2N2222A in T0-92 package Transistor 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bSQ113Q 0D37773 S ■ T-Z7-0! NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Min V Cbo(V) Min Min Max Ic/V c (mA/V) Ft (MHz) Min PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 30 30 30 30 30 30 30

PN222A

Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A
Contextual Info: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250

Contextual Info: ^ Sem iconductor SEMICOND Surface Mount Transistors Medium Power— NPN Case Style Vc b o V Min VCER* VCEO (V) Min VEBO (V) Min MMBT3568 TO-236 (49) 80 60 5 TO-236 (49) 140 MMBT3700 80 7 •c e s ' •c BO q VC b (°A) (V) Max 50 10 40 90 *V(V) hfE @ lc