MJF15031 Search Results

Contextual Info: ON Semiconductor NPN Complementary Power Transistors MJF15030 PNP MJF15031 For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

221D

Abstract: AN1040 MJE15030 MJE15031 MJF15030 MJF15030G MJF15031 MJF15031G
Contextual Info: MJF15030 NPN , MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

MJE15031

Abstract: MJF15031
Contextual Info: Inchange Semiconductor Product Specification MJF15031 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220F package ・Complement to type MJE15028/30 ・High transition frequency ・DC Current Gain Specified to 4.0 Amperes hFE = 40 Min @ IC =- 3.0 Adc

221D

Abstract: AN1040 MJE15030 MJE15031 MJF15030 MJF15030G MJF15031 MJF15031G TO220 HEATSINK MJE15031 transistor
Contextual Info: MJF15030 NPN , MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

221D

Abstract: AN1040 MJE15030 MJE15031 MJF15030 MJF15031
Contextual Info: ON Semiconductort NPN Complementary Power Transistors MJF15030 PNP MJF15031 For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

MJE15030

Abstract: 12 volt-30 amp power diode Surface mount NPN/PNP complementary transistor 221D AN1040 MJE15031 MJF15030 MJF15031 mje15030 mje15031
Contextual Info: MOTOROLA Order this document by MJF15030/D SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

Contextual Info: MJF15030 NPN , MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

MJF15030

Abstract: MJF15031
Contextual Info: SavantIC Semiconductor Product Specification MJF15030 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type MJF15031 ·High transition frequency ·DC current gain specified to 4.0 amperes hFE = 40 Min @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc

MJE15031

Abstract: MJF15030 MJF15031
Contextual Info: SavantIC Semiconductor Product Specification MJF15031 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type MJF15030 ·High transition frequency ·DC Current Gain Specified to 4.0 Amperes hFE = 40 Min @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc

MJF15030G

Abstract: MJF15031G MJF1503x 221D AN1040 MJE15030 MJE15031 MJF15030 MJF15031
Contextual Info: MJF15030 NPN , MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

Contextual Info: MJF15031 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150öè V(BR)CBO (V)150 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

MJF15030

Abstract: MJF15031
Contextual Info: Inchange Semiconductor Product Specification MJF15030 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・Complement to type MJF15031 ・High transition frequency ・DC current gain specified to 4.0 amperes hFE = 40 Min @ IC = 3.0 Adc

Contextual Info: MJF15030 NPN , MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

221D

Abstract: AN1040 MJE15030 MJE15031 MJF15030 MJF15031 transistor 254 isolated npn MJ*15030
Contextual Info: ON Semiconductor NPN Complementary Power Transistors MJF15030 PNP MJF15031 For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

IR3001

Abstract: pin configuration NPN transistor BD679 724 motorola NPN Transistor with heat pad similar ic BA 3812 PMD16K40 TRANSISTOR BC 545 2Sd331 npn transistor BU108 BD130 TO126 pin configuration NPN transistor tip41c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF15030 PNP MJF15031 Complementary Power Transistors For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

ADC 0408

Abstract: mjf15030g transistor 257 isolated npn
Contextual Info: MJF15030 NPN , MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

transistor marking code 12W SOT-23

Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc