MG600Q1 Search Results

Contextual Info: MG600Q1US41 HIGH POWER SW ITCHING APPLICATIONS. MOTOR CO N TRO L APPLICATIONS. High Input Impedance H ighspeed : tf= 0.5/iS Max. Low Saturation Voltage : V cE (sat) = 4.0V (Max.) Enhancement-Mode : TOSHIBA 2-109E1A Outline (See page 3 for the device outline)

Contextual Info: TO SH IBA MG600Q1US41 TO SH IBA G IR M O D U L E M G 6 SILICON N C H A N N EL IGBT Q 1 U S 4 1 HIGH POW ER SW ITCHING APPLICATIONS. M O T O R CONTRO L APPLICATIONS. • High Input Impedance • H ig h sp e e d : tf=0.5/us Max. • Low Saturation Voltage : V c jj(s a y = 4.0V (Max.)

mg600q1us51

Contextual Info: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)

Toshiba bridge diode

Abstract: MG600Q1US51
Contextual Info: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode

MG600Q1US61

Abstract: TOSHIBA IGBT DATA BOOK
Contextual Info: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)

MG600Q1US51

Contextual Info: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode

Contextual Info: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)

MG600Q1US51

Abstract: 10EFF
Contextual Info: TOSHIBA MG600Q1US51 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage

TOSHIBA IGBT

Contextual Info: MG600Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA

102 TRANSISTOR

Abstract: MG600Q1US59A mitsubishi IGBT Modules MG600Q1US59 E80276 IGBT 600V 600A
Contextual Info: MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG600Q1US59A FEATURE ¡The electrodes are isolated from case. ¡Enhancement-mode ¡Integrates fault-signal output circuit in package. Short-Circuit and Over-Current

MG600Q1US41

Abstract: 2-109E1A
Contextual Info: T O S H IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. Low Saturation Voltage : VCE(sat)~4-0V (Max.) Enhancement-Mode

0001 TRANSISTOR

Contextual Info: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)

MG600Q1US65H

Abstract: diode BY 028
Contextual Info: MG600Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA

MG600Q1US41

Contextual Info: T O SH IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5^s Max. Low Saturation Voltage : VQE(sat) = 4.0V (Max.) Enh ancement-Mode

Contextual Info: T O S H IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. H ig h In p u t Im pedance EQUIVALENT CIRCUIT H ig h Speed : tf=0.5/*s M ax. C Low Satu ratio n Voltage : V c E (s a t) = 4-0V(M ax.)

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

TC58DVG14B1FT00

Abstract: TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt
Contextual Info: ご注意 本資料に掲載されております製品※の一部に2004 年 10 月 1 日付けで三菱 電機株式会社へ譲渡された製品があります。詳しくは弊社営業窓口までお問 い合わせ下さい。 ※対象製品：大容量モジュール事業 自動車用途、高耐圧製品を除く

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

GT30J322

Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

tlp421 equivalent

Abstract: igbt protection circuit diagram MQ400V1US51A igbt controller IPM module MG400Q2YS60A 110C mg600Q1US59 MG300Q2YS60A MG400V2YS60A
Contextual Info: NEW COMPACT IGBT MODULES WITH INTEGRATED CURRENT AND TEMPERATURE SENSORS By Eric R. Motto, John F. Donlon Application Engineering Powerex Incorporated Abstract – A new family of compact IGBT modules has been developed to bridge the gap between fully integrated IPM devices and basic IGBT modules. The idea of this new family was

Contextual Info: T O SH IB A M G 6 00 Q 1U S5 1 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0.3,ms Max. @Induetive Load Low Saturation Voltage