MG15N2 Search Results

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15N2YK1 HIGH POWER S WITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hj-E= l°0 Min. (Ic=15A)

transistor 16305

Contextual Info: TOSHIBA OISCRETE/OPTO} 90D 16302 9097250 TOSHIBA DISCRETE/OPTO ¿Tostulic SEMICONDUCTOR D T-3J-3S MG15N2CK1 TECHNICAL DATA MG15N6EK1 W o cs ös m H o 2: 00 o f vf £\ > W vO 2 m cs a TOSHIBA CORPORATION OT I A 2 A - 309 - 2 - > L » î "TO TOSHIBA {DISCRETE/OPTO}

mg15n2

Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG15N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.0ns Max. trr=0. 5(is (Max.) . Low Saturation Voltage: V q t (sat)~5.OV(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in one

MG15N2YS1

Abstract: ALY TRANSISTOR transistor ALY
Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG15N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5us(Max.) . Low Saturation Voltage: Vqe ( s a t )= 5.OV(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in one

mg15n2

Contextual Info: ^ shíbT T d i s c r e t e /o p t o > TO 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D 16156 SEMICONDUCTOR D T -3 3 -2 7 TOSHIBA GTR MODULE MG15N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT TENTATIVE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

diode t25 4 A8

Abstract: ABBA MG15N2CK1 MG15N6EK1 MG15N6 DFWA
Contextual Info: SEMICONDUCTOR MG15N2CK1 TECHNICAL DATA MG15N6E1C1 M O CM U> Z M W O z o X TOSHIBA CORPORATION Û T IAÎ A - 309 - fu s itiha SEMICONDUCTOR MC15N2CX1 M G 1 5 N 6 E K 1 TECHNICAL DATA MAXIMUM RATINGS <T.-25*C CHARACTERISTIC SYMBOL RATING VCBO 1100 V Collsctor-Eeitter Sustaining Voltage

mg15n2

Contextual Info: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG30G2CL3

Abstract: MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29
Contextual Info: -219% £ CK-3 Cl O B1 Bl El/C 2 E1/C2 62 & 3 . ;U -K Ta=25t m s Ts'i (V) (us) IB VcE V BE t St 9 t rr V f I B1 t on I B2 tf I f C//s) IF (A) fi * (A) V BE di/dt ccm ^ fifi mm Wi-F SP m g b m ^ £ fi Á (H) IS * 3.5 15 0.3 2 h 6 0.3 -0.9 600 40 1.5 15 1.0

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

mg15g1al3

Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
Contextual Info: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

MG30G2CL3

Abstract: MG50M2CK2 MG75H2CL1 MG25M2CK2 MG50M2YK9 MG75H2YL1A MG50G2YL1A MG25M2YK9 MG50Q2Y MG15N2YK1
Contextual Info: - 218 — n p n , > o 9 - ' y \ v • o y : i- * 'í) l- f ''í± - F i4 Vauxnv - i n « 2 flü ü fflü g tl) asn o s CK-1 / 'W W ^ U K U . lu i. t CK-2 tu o ¡>j± o Y - V T o BI y h / H 1’ c r ) i¡'±/\ Z B1 aZ E l/ B2 32 í± 1 . T c=25 c * m % V CBO

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

MG30G2CL3

Abstract: MG25M1BK1 MG50M2CK2 MG50M1BK1 MG100G1AL3 MG10G6EL2 MG30G1BL3 MG30G6EL1 MG20G6EL1 MG25H2YS1
Contextual Info: 9097250 TOSHIBA DISCRETE/O PTO TOSHIBA {DISCRETE/OPTO} TO 9 0D 16488 D T- T Ë j | TOT VE h U UUJihMöö Jb p GTR Modules Bipolar Darlington n o te : W A STA G E DARLINGTON, CK):3-STAGE DARLINGTON $:UNDER DEVELOPMENT * :V c e x <s u s i #:UL RECOGNIZED

MG100M2YK1

Abstract: TRANSISTOR D 880 MG200M1UK1 MG75G2YL1 MG75M2YK1 MG15N2YK1 MG25M2YK1 MG25N2YK1 Westcode MG50G2YL1
Contextual Info: WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly simplify mounting. A wide variety of devices