ME300 Search Results

diode a7

Abstract: A7 DIODE ME3012A7 TJ3 diode bridge me3006a7 ME3012 powerex ME30
Contextual Info: POWEREX INC 15E D • TETHbBl 00033^1 G ■ fCMEREX M E30 Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003LeMans, France (43) 72.75.15 7 A7 Three-Phase Diode Bridge Module 75 Amperes/600-1600 Volts

BF480

Abstract: R950 Avantek S 2n3570 2SC988
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619

BC117

Abstract: t082 2N5831 me9002 fairchild semiconductors NPN TRANSISTORS LIST BSX19 ME8003 2N918 T0105
Contextual Info: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors N P N H igh Voltage Amplifier Transistors P la s t ic P a c k a g e T 0 9 2 , T 0 1 0 5 REFERENCE T A B L E C H A R A C T E R I S T IC S @ 25‘C M A X R A T IN G S C ode V CEO Volts

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

ME200605

Abstract: MB11A02 ME100603 three phase bridge diode ME101203 ME602003 CE720802 ME201
Contextual Info: POlilEREX INC TÏ de 1 75^4^51 □ ODlfl3t4 T D Three Phase Bridge Diode Modules Idc @ Tc Amps (°C) Vrrh (Volts) Ifsm (Amps) trr (typical) (¡¿sec) VlSOL (Vrus) Package Type No. 20_ 97_ 800_350_ —_ 2000_ ME4_ ME400802

powerex ME30

Abstract: ME300610
Contextual Info: POUEREX INC 1SE D 75T4b21 Q Q 0 3 3 ci cl S 7-'£ò-0J M E30 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 9 2 5 - 7 2 7 2 P o w e r e x Europe, S.A., 428 Avenue G. Durand, BP107, 72003Le Mans, France (43) 72.75.15 10 Three-Phase Diode Bridge Module

P346A

Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19
Contextual Info: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

ME-3000

Abstract: kl3 59 bu38 2600I BU11 BU33 ME-1600 BU22 BU38 bu39 ME-160
Contextual Info: Anschluss-Block mit abnehmbaren FederKlemmen und Lochraster-Feld Connector Block with detachable Spring Terminals and Prototyping Area Steckerbelegung /Pin Assignment – Rev. 1.0 ME AB-D78M/S-H Meilhaus Electronic GmbH Fischerstraße 2 82178 Puchheim/Germany

DMJ3086

Abstract: DMK6635 DMB-4501 DME3030 DMF3059 KA band detector DMK50 DMF3068 DMJ3305 ME3011
Contextual Info: Schottky Barrier Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha Schottky barrier mixer and detector diodes by basic con­ struction, package style and frequency band. Pressure Contact

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

HGM160ME-00

Abstract: HGM092ME-00 HGM090 HGM092M K674 d 718 hgm ieh TPC3000 ML/82x33/587/OS/MB8R501-P/505-P/MIL-C-55302/57/61
Contextual Info: The HYPERBOLOID contactaf2.46 dc s dc s dc s i6aslas ilr o dc sn2st sl 1 T c s dc 13 s dc s gc 1 dc s dc 13 s 140 58th Street, Brooklyn, NY 11220 Phone (718 492-4448 Fax (718) 492-9898 1 SPECIFICATIONS SERIES HGM .100" CENTERS .050" OFFSET CONTACT SIZE: .030 DIA. (.76MM) – FOR #22 AWG STRANDED

BU102

Abstract: BDX23 bd663 BD663B BDX61 BSY51 BD142 BDX23/40636 BDX71 BC117
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ 25'C Max. rating«

EPON ONU

Abstract: mustang 2 Mustang ONU OLT SoC 2000 Mustang 300 Mustang Software EPON SoC fxs line interface
Contextual Info: Mustang 300 TM Product Brief Highly Integrated EPON SoC Expanding TranSwitch’s end-to-end fiberto-the-home FTTH semiconductor portfolio, Mustang 300 is a fully integrated, single chip, mixed-signal system-on-chip (SoC) for gigabit Ethernet passive optical network

D-Sub 78-pin female Connector

Abstract: me 6100 D-SUB 50 PIN feMALE CONNECTOR D-Sub 78-pin Connector D-Sub 78-pin male Connector 37-pin pinout D-Sub 37-pin male Connector D 9-pin female Connector ME-160 TERMINAL BLOCK 25 DSUB
Contextual Info: ME 22.04.2002 13:56 Uhr Seite 25 Reliable Cabling for your Measurement System ● Reliable, shielded cables. ● Ideal solution for permanent cabling in industry and labs. ● For all PC boards with D-sub ME series and other suppliers. Cables: • Ideal solution for connection of DAQ boards to ME

P346A

Abstract: ME9002 bc117 ME8003 ME9001 19552B BSX19 BSX20 BSY95A 19316D
Contextual Info: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors 40 40 15 15 min h FE max 20 40 60 120 @lc mA << o BSX19 BSX20 o Code V cao V << REFERENCE T A B LE 10 10 0.25 0.25 sat ton to f. ma ns ns MHz Stock No. 10 10 7 7 15 18 400 500 19552B

BSX20 2n2222a

Abstract: BU102 BDX71 2n2222 micro electronics TT 2222 npn P346A ates 2n3055 BU100A FAIRCHILD bu102 2N3055V
Contextual Info: Fairchild Sem iconductors Se m ico n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors Metal Can TO IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C

P346A

Abstract: ME8003 ME6002 ME9001 ME9002 BC117 bc142 BSX19 BSX20 BSY95A
Contextual Info: M icro- Electronics Sem iconductors N PN Transistors NPN Switching Transistors m in h FE m ax @ lc mA < < o < < Code V cao V o REFERENCE T A B L E sat ton ns ma to f. ns f T MHz S to c k No. O u tlin e D r a w in g No. BSX19 40 15 20 60 10 0.25 10 7 15 400

Contextual Info: Mustang 300 E xpanding the company’s end-to-end fiber-to-the-home FTTH semiconductor portfolio, the Mustang™ 300 ASSP is a fully integrated, single chip, mixed-signal protocol processing solution for gigabit Ethernet Passive Optical Network (EPON) ONU applications. This highly-integrated and