BC117
Abstract: t082 2N5831 me9002 fairchild semiconductors NPN TRANSISTORS LIST BSX19 ME8003 2N918 T0105
Contextual Info: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors N P N H igh Voltage Amplifier Transistors P la s t ic P a c k a g e T 0 9 2 , T 0 1 0 5 REFERENCE T A B L E C H A R A C T E R I S T IC S @ 25‘C M A X R A T IN G S C ode V CEO Volts
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P346A
Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19
Contextual Info: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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BU102
Abstract: BDX23 bd663 BD663B BDX61 BSY51 BD142 BDX23/40636 BDX71 BC117
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ 25'C Max. rating«
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P346A
Abstract: ME9002 bc117 ME8003 ME9001 19552B BSX19 BSX20 BSY95A 19316D
Contextual Info: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors 40 40 15 15 min h FE max 20 40 60 120 @lc mA << o BSX19 BSX20 o Code V cao V << REFERENCE T A B LE 10 10 0.25 0.25 sat ton to f. ma ns ns MHz Stock No. 10 10 7 7 15 18 400 500 19552B
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BSX20 2n2222a
Abstract: BU102 BDX71 2n2222 micro electronics TT 2222 npn P346A ates 2n3055 BU100A FAIRCHILD bu102 2N3055V
Contextual Info: Fairchild Sem iconductors Se m ico n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors Metal Can TO IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C
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