MD7001 Search Results

MD7001

Abstract: MD700 MD7001F MQ7001
Contextual Info: MD7001 SILICON MD7001F MQ7001 M U LTIPLE SILIC O N A N N U L A R T R A N SIST O R S PNP SILIC O N M U LT IPLE T R A N SIST O R S . . . designed for U9e as differential amplifiers, dual generalpurpose amplifiers, front end detectors, and temperature compensation applications.

MD8003

Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A

MNT6337J

Abstract: SML1258 SML-1258 MJ15003 MJ15004 MNT6337H SM1307 NPN/SML1258 mnt6337 HP5082 MHQ2222
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description HP5082-2800DCSM BCW29CSM MD2905 MD3725 MD5000 MD6003 MD7001 MHQ2222 MHQ2222A MHQ2907 MHQ6002 MJ11013 MJ11014 MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 MJ14000 MJ14001 MJ14002

MD6100

Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001
Contextual Info: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

md7001

Contextual Info: MOTOROLA SC XSTRS/R F T -tf 15E D | t3t,72SM OQâbSSfl 4 | M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc Collector Current — Continuous >C 600 mAdc Total Device Dissipation @ T/y = 25°C

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

MD8003

Abstract: MD-113 MD7005 2N4854 MD6100
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c (mA) v CBO v CEO 00 (V) «C (mA) :E ®Vc6 (V) h MATCHING VCE(SAT )® >C (mA) 00 (MHz) h FE VBE MAX 0.5 % <mV) 150 *TYP MIN 200 60 MIN 50 MiN 35 MAX PNP AMPUSWITCH MAX 600 mm MD982 — 10 10

Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c VCBO v CEO (mA) (V) (V) :E @ lc e v CE (mA) (V) MATCHING VCE(SAT) @ >C (mA) (V) (MHz) h FE Vb e MAX *TYP MIN *r MAX MIN MIN MIN MAX % (mV) MD982 PNP AMPL/SWITCH 600 60 50 35 . 10 10 0.5 150

Dual Transistors TO-78

Abstract: MD6100 MD7002 MD7003A md2369 MD7005 MD2219A MD2369A 2N4854 MD2905A
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE MAX MIN MIN MIN MAX @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MIN % (mV) 0.5 150 200 - - 10 0.4 150 200 - - 1 0.25 10 500 - -

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

MD918

Abstract: MD8002 MD2369 MD5179 MD6002 MD6100 MD2219A MD2369A MD2369B MD2905A
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE (V) @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % MD982 PNP AMPL/SWITCH 600 60 50 35 - 10 MAX 10 0.5 150 200

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

2N2453A

Contextual Info: Dual Transistors TO-78 Case PD TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c v CBO VCEO (n»A) (V) (V) h|=E @lc @ VCE (mA) (V) MATCHING VCE(SAT )® 'C (mA) M (MHz) h FE VBE % 10 <mV) 5.0 3.0 10 5.0 MAX 1.2 50 *TYP MIN 60 150 10 5.0

md7002

Contextual Info: LO 1 o O oi 1 1 S S > E ui ca > O 1O O •r1 ' ifj 1 « ? —ir UJ LU f O IO ! «£ E o o o o o T- o O O Max. MATCHING a I O O 8 1 1 00 1 I I i l ° n I I 00 00 00 CO 00 r - h . r*. i«s. h* Ó Ó Ó Ó Ó i— f— f— I— I— 00 CO CO CO 00 h - h- h-

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

2n3810 datasheet

Abstract: 2N3806 2N3726 2N2453 2N2453A 2N4016 2n4854 to-78 10 amp npn power transistors 2n2913 2N2060 MD6100
Contextual Info: Dual Transistors TO-78 Case PD @ TA=25oC=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION IC (mA) VCBO (V) VCEO (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MAX MIN MIN MIN MAX MIN % (mV) 2N2060 NPN AMPL/SWITCH

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership