MD700 Search Results

MD7002

Abstract: RB2K MD7002A MD7002B IB 6407 02k02
Contextual Info: MD7002 silicon MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation applications.

MD7001

Abstract: MD700 MD7001F MQ7001
Contextual Info: MD7001 SILICON MD7001F MQ7001 M U LTIPLE SILIC O N A N N U L A R T R A N SIST O R S PNP SILIC O N M U LT IPLE T R A N SIST O R S . . . designed for U9e as differential amplifiers, dual generalpurpose amplifiers, front end detectors, and temperature compensation applications.

MD7000

Abstract: 335 j chip die npn transistor 46bsc
Contextual Info: MD7000 SILICON MULTIPLE SILICON ANNULAR TRANSISTOR NPN SILICON MULTIPLE TRANSISTOR . . . designed fo r use as differential amplifiers, dual general-purpose amplifiers, fro n t end detectors and tem perature compensation appli­ cations. • Low Collector-E m itter Saturation Voltage —

MD7007

Abstract: MD7007A MD7007B MD7007F MQ7007
Contextual Info: MD7007, A, B siucon MD7007F, BF MQ7007 M U LTIPLE SILICON A N N U L A R TRANSISTORS NPN SILICON M U LTIP LE TRANSISTO RS . . . designed fo r use as differential amplifiers, dual general-purpose amplifiers, fro n t end detectors and temperature compensation

MD8003

Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A

md7002

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 : (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MD7002 (SILICON) MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed tor use as differential amplifier;, dual general-purpose

Contextual Info: it Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MD7003, F MD7003A, AF MD7003B MQ7003 PNP SILICON DUAL TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . .designed for use as high-gain, low-noise differential amplifiers,

d7007

Contextual Info: MOTOROLA SC XSTRS/R F 1 2 E D | b 3 b ? 2 S M 0Q0tiSb3 Ö f T-3-7* MAXIM UM RATINGS MD7007, A, B; BF MQ7007 Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage Vebo 5.0 Vdc ic 200 m Adc Rating Collector Current — Continuous

Contextual Info: MD7000 – MD7006 70A MOTOROLA TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0µA Anode + C Mechanical Data       D

MNT6337J

Abstract: SML1258 SML-1258 MJ15003 MJ15004 MNT6337H SM1307 NPN/SML1258 mnt6337 HP5082 MHQ2222
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description HP5082-2800DCSM BCW29CSM MD2905 MD3725 MD5000 MD6003 MD7001 MHQ2222 MHQ2222A MHQ2907 MHQ6002 MJ11013 MJ11014 MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 MJ14000 MJ14001 MJ14002

MD6100

Abstract: PNP UHF transistor MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 MD7000 MD7001
Contextual Info: Dual Transistors TO-78 Case Continued vCEO (V) @«c (mA) =E e vCE (V) <0 MD7003B MD8001 MD8002 MD8003 VCBO (V) LU MD7000 MD7001 MD7002 MD7002A MD7002B MD7003 MD7003A •c (mA) MD982 MD2219A MD2369 MD2369A MD2369B MD2905A MD5179 DESCRIPTION > TYPE NO. (V)

MD7004

Abstract: MD7004F MQ7004 0290B
Contextual Info: M D 7 0 0 4 , F s ilic o n M Q 7 0 0 4 NPN SILICON DUAL TRANSISTORS M ULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual high speed switches, front end detectors and temperature compensation ap­ plications. •

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

UPA76ha

Abstract: 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009
Contextual Info: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ic Max (A) fT (Hz) PD Max (W) Mati. Description Package Style NPN Monolithic Pairs, (Co nt' d) 5 10 BFY83 BFY83 BFY83 2N3517 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 ~S~;:~A 15

D7003

Abstract: 2N3810 B 342 Dc MD7003
Contextual Info: MOTOROLA SC XS T R S /R F i pc n B , 15E D I t3b?5Sq QOflbSbl M I MAXIMUM RATINGS • Rating Symbol Value U nit Collector-Emitter Voltage VCEO 40 Vdc Collector*Base Voltage Vc b o 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc 'c 50 mAdc Collector Current — Continuous

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

md7001

Contextual Info: MOTOROLA SC XSTRS/R F T -tf 15E D | t3t,72SM OQâbSSfl 4 | M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc Collector Current — Continuous >C 600 mAdc Total Device Dissipation @ T/y = 25°C

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

tl2222a

Abstract: 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252
Contextual Info: RF LOW•POWER SILICON NPN Item Number Part Number V BR CEO 5 10 UPI2222B PN3947 PN3947 PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 (A) P2N2222A ~t~~~2A 15 20 25 30 S03904 TL2222A TMPT3904 BSS67 BSS67R TP5381 A5T3904 EN3904 EN3_904 MMBT3904 MMT3904 MM3904 MM3904

SOR2222

Abstract: 2SC944 1G335 MM1613 12p sot-23 NEC SOT-23 SOT23 25N 224AA bsw84
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 PN2221A 2N2218A HSEl64 SOR3903 (A) 2N2224 SOR2222A (A) BFX17 BFX17 BFX17 MM1613 ~~i:~~ 15 20 BSS79B BSS79B TMPT2221A BSW84 TP2218A TP2221A MMBT4401 MMBT4401 ~~~b~401 25 30 TIS111 TIS111 2N2221A

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books