MJ11029 Search Results

MJ11032

Abstract: MJ110xx MJ11028-29 Transistor power amp transistors mj11033 TRANSISTOR MJ11028 and/transistor MJ11032
Contextual Info: NPN MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033 High−Current Complementary Silicon Power Transistors http://onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − • • •

MJ11033G

Abstract: MJ11028-29 Transistor transistor mj11028 equivalent 100 amp npn darlington power transistors COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS IC 204 MJ11032 MJ11032G MJ11028 MJ11029
Contextual Info: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High−Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier

TRANSISTOR MJ11028

Abstract: transistor mj11028 equivalent SILICON COMPLEMENTARY transistors darlington MJ11028 MJ11029
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11029

MJ11033G

Abstract: MJ11032 MJ11028-29 Transistor MJ11029 MJ11032G MJ11028 TRANSISTOR MJ11028 transistor MJ11032 MJ11030 MJ11029G
Contextual Info: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features

transistor mj11028 equivalent

Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031
Contextual Info: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A

Contextual Info: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A

MJ11023

Abstract: mj power transistor TRANSISTOR 2SC 635 transistor k 1119 transistor f 421 s417 938-520 MJ11033 MJ11028 MJ11029
Contextual Info: 4 2 £ > -S Z O M m o to r o la O flit , MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 NPN PNP 50 AMPERE COM PLEMENTARY SILICON DARLING TO N POWER TRANSISTOR H IG H -C U R R EN T COM PLEMENTARY SILICO N TRANSISTORS . for use as output devices in complementary general purpose

Contextual Info: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

mj11032 mexico

Abstract: MJ11032 transistor mj11028 equivalent MJ11028 MJ11029 MJ11033
Contextual Info: ON Semiconductort NPN MJ11028 High-Current Complementary Silicon Transistors MJ11032* PNP . . . for use as output devices in complementary general purpose amplifier applications. MJ11029 • High DC Current Gain — MJ11033 * • • • hFE = 1000 Min @ IC = 25 Adc

Contextual Info: MJ11029 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: MJ11029 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

MJ11029

Contextual Info: MJ11029 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A

Contextual Info: MJ11029 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

MNT6337J

Abstract: SML1258 SML-1258 MJ15003 MJ15004 MNT6337H SM1307 NPN/SML1258 mnt6337 HP5082 MHQ2222
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description HP5082-2800DCSM BCW29CSM MD2905 MD3725 MD5000 MD6003 MD7001 MHQ2222 MHQ2222A MHQ2907 MHQ6002 MJ11013 MJ11014 MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 MJ14000 MJ14001 MJ14002

MJ11033G

Abstract: MJ11032 transistor mj11028 equivalent MJ11032G transistor mj11032 equivalent MJ11028-29 Transistor MJ11028 MJ11029 MJ11030 MJ11028G
Contextual Info: MJ11028, MJ11030, MJ11032 NPN MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors http://onsemi.com High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications.

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

60 amp npn darlington power transistors

Abstract: transistor HJ 388 MJ11030 MJ11033 TRANSISTOR MJ11029 MJ11028 MJ11029 MJ11031 MJ11032 transistor MJ11032
Contextual Info: ÆàMOSPEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DC Current Gain: hFE = 1000 Min @ lc = 25 A hFE = 400(Min) @ lc = 50 A

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.