MARKING BD DIODES Search Results

Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR42/43 RoHS Device Io = 200 mA V R = 30 Volts Features 0402(1005) Low forward voltage. 0.041(1.05) 0.037(0.95) Designed for mounting on small surface. Extremely thin/leadless package. Majority carrier conduction.

Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBER42/43-HF RoHS Device Io = 200 mA V R = 30 Volts Features 0503(1308) Halogen free. 0.053(1.35) 0.045(1.15) Low forward voltage. Designed for mounting on small surface. 0.034(0.85) 0.026(0.65) Extremely thin/leadless package.

Contextual Info: SMD Schottky Barrier Diode SMD Diodes Specialist CDBQR42/43-HF RoHS Device Io = 200 mA V R = 30 Volts Features 0402(1005) Halogen free. Low forward voltage. 0.041(1.05) 0.037(0.95) Designed for mounting on small surface. Extremely thin/leadless package.

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

Contextual Info: MOTOROLA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

LT3973-3.3

Contextual Info: LT3973/LT3973-3.3/LT3973-5 42V, 750mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes FEATURES n n n n n n n n n n n n n n DESCRIPTION Ultralow Quiescent Current 2.5µA IQ at 12VIN to 3.3VOUT Low Ripple Burst Mode Operation Output Ripple < 10mVP-P

Diodes Marking K7

Abstract: Diodes Marking K6 sot23 marking m8 transistors marking 1p BSS69 marking 1p sot23 Marking b4 SOT23 MARKING l7 MARKING K4 marking H6 sot 23
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B

LT3790

Abstract: LT3990EDD LT3990EMSE lt3990 DIODE 0.7v LT3990IMSE GND45 GND050
Contextual Info: Electrical Specifications Subject to Change LT3990 60V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes Features Description Low Ripple Burst Mode Operation 2.5µA IQ at 12VIN to 3.3VOUT Output Ripple < 5mVP-P n Wide Input Voltage Range: 4.2V to 60V Operating

LT3990EDD

Abstract: LT3970-3 LT3990EMSE LT3990 transistor BD 540
Contextual Info: LT3990 62V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes Features Description Low Ripple Burst Mode Operation 2.5µA IQ at 12VIN to 3.3VOUT Output Ripple < 5mVP-P n Wide Input Voltage Range: 4.2V to 62V Operating n Adjustable Switching Frequency: 200kHz to 2.2MHz

1N935B-1

Contextual Info: 1N935B-1 – 1N938B-1 Qualified Levels: JAN, JANTX, JANTXV and JANS Temperature Compensated Zener Reference Diodes Available on commercial versions Qualified per MIL-PRF-19500/156 DESCRIPTION The popular 1N935B-1 thru 1N940B-1 series of Zero-TC reference diodes provides a selection

Diodes Marking K6

Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

microsemi 1n6642

Abstract: 1N6638 JANTX 1N6638 1N6642 JANTXV 1N4148-1 JANS jantx diodes 1115-13
Contextual Info: 1N6638, 1N6642, 1N6643 Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 DESCRIPTION These popular JEDEC registered switching/signal diodes are military qualified and available

Contextual Info: LT3970 Series 40V, 350mA Step-Down Regulator with 2.5µA Quiescent Current and Integrated Diodes FEATURES n n n n n n n n n n n n n DESCRIPTION Low Ripple Burst Mode Operation 2.5µA IQ at 12VIN to 3.3VOUT Output Ripple < 5mVP-P Wide Input Voltage Range: 4.2V to 40V Operating

BD1501

Contextual Info: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B

smd marking BD

Abstract: 1SS271
Contextual Info: Diodes SMD Type VHF~UHF MIXER APPLICATION 1SS271 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small Delat total capacitance: ÄCT = 0.1pF Max 0.55 Small Delat forward voltage:ÄVF = 10 mV(Max) 2 +0.1 0.95-0.1 +0.1 1.9-0.1

MARKING 330D

Abstract: BD330DW 330D marking iP sot363
Contextual Info: MOTOROLA Order this document by MBD110DWT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT-363 package is a solution which simplifies

1N3026B-1 JANTXV

Abstract: zener diode nomenclature 1N3020B
Contextual Info: 1N3016B-1 thru 1N3045B-1 Available on commercial versions 1 WATT METAL CASE ZENER DIODES Qualified per MIL-PRF-19500/115 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This well established Zener diode series for the 1N3016B-1 thru 1N3045B-1 JEDEC registration in the glass DO-41 package provides a glass hermetic seal for 6.8 to 110 volts. It

1N3016B-1

Abstract: 1N3044B1 1N3029B-1
Contextual Info: 1N3016B-1 – 1N3045B-1 Available on commercial versions 1 Watt Glass Case Zener Diodes Qualified per MIL-PRF-19500/115 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This well established Zener diode series for the 1N3016B-1 through 1N3045B-1 JEDEC

1N943B1 JANTX

Abstract: 1N941 1N941B-1 1N945B-1
Contextual Info: 1N941-1 thru 1N945B-1 Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS 11.7 Volt Temperature Compensated Zener Reference Diodes Qualified per MIL-PRF-19500/157 available on some part numbers DESCRIPTION The popular 1N941-1 thru 1N945B-1 series of zero-TC reference diodes provides a selection

FMMT2222A

Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

NPN marking 8e

Abstract: FMMT2222A H9 sot 23 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C

Contextual Info: MOTO!ROILA Order this document BY MMBD110T1/D SEMICONDUCTOR TECHNICAL DATA M M BD 110T1 M M BD 330T1 M M BD 770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF

Contextual Info: DIGITRON SEMICONDUCTORS 1N5968-1N5969, 1N6632-1N6637 5 WATT GLASS ZENER DIODES MAXIMUM RATINGS Operating Temperature: -65 to +175°C Storage Temperature: -65 to +200°C Power dissipation 5W @ TL = 25°C, L = 3/8” Power derating 33mW/°C above TL = 25°C, L = 3/8”