DFN10 Search Results

A12 diode

Abstract: diode 0450
Contextual Info: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free

Contextual Info: TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode DFN1006 0402 Features —Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —100W Peak Pulse Power per Line (tp=8/20 s) —Protects one birectional I/O line

Contextual Info: SO T8 83 B PESD5V0X2UAMB Ultra low capacitance unidirectional double ESD protection diode 10 April 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD)

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

SCS0240DF

Abstract: DFN1006-2
Contextual Info: SCS0240DF 0.2 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DFN1006-2 FEATURES ● Low turn-on voltage ● Fast switching ● PN junction guard for transient and ESD protection

ds3-0505

Abstract: BAS16LP BAS16LP-7 DFN1006-2 A6 marking marking a6
Contextual Info: SPICE MODEL: BAS16LP BAS16LP NEW PRODUCT Lead-free Green SURFACE MOUNT SWITCHING DIODE Features • · · · · · Fast Switching Speed Ultra-Small Leadless Surface Mount Package For General Purpose Switching Applications DFN1006-2 Lead Free By Design/RoHS Compliant Note 1

Contextual Info: 83B PDTA115TMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PQMD12

Contextual Info: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot

Contextual Info: Plastic Packages for Integrated Circuits Dual Flat No-Lead Package Family DFN MDP0047 A DUAL FLAT NO-LEAD PACKAGE FAMILY (JEDEC REG: MO-229) D MILLIMETERS N N-1 0.075 C 2X PIN #1 I.D. E 1 2 0.075 C B 2X TOP VIEW (D2) 4 L1 N-1 N L (N LEADS) SYMBOL DFN8 DFN10

DFN1006-2

Abstract: SDM10U45LP SDM10U45LP-7
Contextual Info: SPICE MODEL: SDM10U45LP SDM10U45LP Lead-free Green NEW PRODUCT SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · Low Forward Voltage Drop · · · · Low Capacitance Guard Ring Die Construction for Transient Protection DFN1006-2 Lead Free By Design/RoHS Compliant Note 1

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTA123YMB

Abstract: PDTC123YMB
Contextual Info: 83B PDTA123YMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

Contextual Info: NCP3337MNADJGEVB: Adjustable Output Voltage LDO Regulator Evaluation Board Evaluation Board Description The demoboard supports the LDO regulator NCP3337 in DFN10 package with adjustable output voltage. The ENABLE function allows turn the device to low consumption mode with quiescent current

PDTA143Z

Abstract: PDTA143ZMB PDTC143ZMB PDTA143
Contextual Info: 83B PDTA143ZMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = 47 k Rev. 1 — 29 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

Contextual Info: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PDTC144WMB

Contextual Info: 83B PDTA144WMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 22 k Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

transistor MW 882

Abstract: 5v ZENER DIODE zener diode 5v Zener Diode SOT-, 5v, 200mA PDTA144E DFN1006-2 DFN1006 DFN1006-3 Zener diode with 9v Zener Diode SOT-23, 6v, 200mA
Contextual Info: New Product Announcement October 17, 2007 Diodes Expands Line of Ultra-Miniature DFN1006 Product Family Targeting Handheld Portable Applications DFN1006 Package Advantage D Wide Product Expansion in Industry Leading Micro-Leadless DFN1006 Packages Include:

Contextual Info: D5V0L1B2LP4 ADVANCE INFORMATION LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • Provides ESD Protection per IEC 61000-4-2 Standard: • Air – ±30kV, Contact – ±30kV • • Case: X2-DFN1006-2 Case Material: Molded Plastic, “Green” Molding Compound. UL

Contextual Info: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

NXP SMD ic MARKING CODE

Abstract: smd code marking ft sot23 marking 41 sot23 nxp
Contextual Info: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 57

Abstract: PDTC114YMB PDTA114YMB
Contextual Info: 83B PDTC114YMB SO T8 NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.