M28LV16 Search Results

Contextual Info: SGS-THOMSON raD»HlLll Ê'inM l)i!lD(ei M28LV16 LOW VOLTAGE 16K (2K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation

M28LV16

Abstract: PDIP24 PLCC32 PLCC32MS
Contextual Info: f Z 7 ^ J ir , S G S -T H O M S O N M28LV16 K fflD g M S ilL E (M s J E !lD (@ i LOW VOLTAGE PARALLEL AC C ESS 16K (2K x 8 EEPROM PRODUCT PREVIEW FAST ACCESS TIME: 150ns SINGLE 3V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION: - Active Current 8mA - Standby Current 50|j.A

NE 555 circuit diagram

Abstract: M28LV16 PDIP24 PLCC32 SO24
Contextual Info: M28LV16 LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

a10156

Abstract: IA10 M28LV16 PDIP24
Contextual Info: S G S -1 H 0 M S 0 N G 7 . RilDtglMllllLKgTn^OKlfligi M28LV16 LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation

28LV16

Contextual Info: SGS-THOMSON M28LV16 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

Contextual Info: r= 7 SGS-THOMSON * 7 # . « » ilL iO T Q I f f lS M28LV16 i LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation

Contextual Info: SGS-THOMSON IIIIM J ì ILIì M W M28LV16 IIÈ Ì 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE:

M28C16A

Abstract: M28LV16 PDIP24 PLCC32 SO24
Contextual Info: M28LV16 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max

k241

Abstract: A10E
Contextual Info: M28LV16 LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION DATA BRIEFING FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max

Contextual Info: /= 7 ^ 7 # S G S -T H O M S O N M28LV16 R iilD g [fii® ilL i( g r a iD ( g i LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW FAST ACCESS TIME: 150ns SINGLE 3V ±10% SUPPLY VOLTAGE LOW POWER CONSUMPTION: - Active Current 8mA - Standby Current 50|j.A

Contextual Info: /T T S G S -T H O M S O N li!ilO IILi g¥K©li!!lD(gi M28LV17 LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3V± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA - Standby Current 50|jA

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

TSOP28 memory

Abstract: M28LV16 PDIP24 W1217
Contextual Info: S G S -T H O M S O N iyitEïïïïÂQDtES M 2 8 L V 1 6 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE:

IL055

Contextual Info: SGS-THOMSON M28LV17 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max

Contextual Info: SGS-THOMSON raDwunnteinMiiiiiDei M28LV17 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max

a10157

Abstract: CZL - A8 M28LV16 PDIP28 PLCC32 S028 ZDA10
Contextual Info: S G S -T H O M S O N ^ 7 /» M 28LV17 M [ M S E [ L I ç n ïïM 5 [ iïïD ( S § LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

M28LV16

Abstract: PDIP28 PLCC32
Contextual Info: M28LV17 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

M28LV16

Abstract: PDIP28 PLCC32
Contextual Info: M28LV17 LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

A10E

Contextual Info: M28LV17 LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION DATA BRIEFING FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA