M28C16A Search Results

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM DATA BRIEFING FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation

Contextual Info: M28C16A M28C17A 5 F . 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V tor M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE PDIP28 (BS)

Contextual Info: M28C16A M28C17A SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16K 2K x8 PARALLEL EEPROM PRELIMINARY DATA • > > ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation

Contextual Info: rZ T SGS-THOMSON ^ 7 # . raDwunnteinMiiiiiDei M28C16A M28C17a 16K 2K x 8 PARALLEL EEPROM • > > ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation - Byte or Page Write Cycle: 5ms

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM DATA BRIEFING FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output

Contextual Info: M 28C 16A M 28C 17A 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLYVOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V for M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE I PDIP28 (BS)

Contextual Info: SGS-THOMSON IIIIM J ì ILIì M W M28C17 IIÈ Ì 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ > ■ > ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

PDIP28

Abstract: EEPROMs M28C16A M28C16A-W M28C16B M28C16B-W M28C17A M28C17A-W M28C17B M28C17B-W
Contextual Info: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 150ns. They can also be randomly written at a Byte level without previous erasure. Page

TOOC

Contextual Info: SGS-THOMSON M28C17 [M D M [iL [iO T [M O (g S 16K (2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE:

M28C16

Abstract: M28C16A M28C17 PDIP28 PLCC32
Contextual Info: M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

ST93C86

Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
Contextual Info: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM

M28C16

Abstract: M28C16A PDIP24 PLCC32 SO24
Contextual Info: M28C16 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

Contextual Info: SGS-THOMSON IIIIM J ì ILIì M W M28LV16 IIÈ Ì 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE:

M28C16A

Abstract: M28LV16 PDIP24 PLCC32 SO24
Contextual Info: M28LV16 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max

atmel 24c16a

Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Contextual Info: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad

plcc32

Abstract: PDIP28 eeprom parallel st PDIP24 M28C64C M28C64-W M28C16A M28C16A-W M28C16B M28C16B-W
Contextual Info: Parallel EEPROMs HIGH PERFORMANCE Parallel EEPROMs offer the highest performance and flexibility of all types of non-volatile memory. They can be randomly accessed at high speed, with access times of 90 - 120ns. They can also be randomly written at a Byte level without previous erasure. Page

M28C16A

Abstract: M28C17 M28C17A PDIP28 S028
Contextual Info: w , k7 # » S G S -T H O M S O N M 28C 16A R itlD Ê lM IlilL IK Ë in S M Q tÊ S M 2 8C 1 7 A 16K 2K x8 PARALLEL EEPROM P R E L IM IN A R Y D A TA • ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLYVOLTAGE LOW POWER CONSUMPTION

M28C16

Abstract: M28C16A M28C17 PDIP28 PLCC32
Contextual Info: M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in