ZDA10 Search Results

N341256

Abstract: N341256P15 N341256SJ N341256SJ-15 41256 n341256p20 n341256s N341256SJ12 41256 ram N341256SJ15
Contextual Info: CMOS SRAM Jw NKK N341256 256K-BIT 32KX8 • Features • CMOS SRAM organized as 32,768 x Sbits • Single +5.0V(+10% ) Power Supply • High Speed A ccess time : 12/15/20/25ns • Low power operation Active : 180mA(max.) 28pin Plastic DIP(300m il) Standby : 60m A(m ax.)

T1A13

Abstract: T1A1 "t1A13"
Contextual Info: r j m 23000 CMOS ROMs Series •Low Power »High Performance Features Late mask programmable for quick turn limes • Six JEDEC standard versions +3 volt power supply option available IMP23L128 28 pin 128K 16,384 word x 8 bit IMP23L256 28 pin 256K 32,768 word x 8 bit

Contextual Info: HN58V1001 Series Preliminary 131,072-word x 8-bit Electrically Erasable and Programmable CMOS ROM The Hitachi HN58V1001 is a electically erasable and p rogram m able EEPROM organized as 131072-word x 8-bit. It realizes high speed, low power consumption, and a high level of reliability,

Contextual Info: HN624316 Series 1,048,576-word x 16-bit / 2,097,152 x 8-bit CMOS Programmable Mask ROM HITACHI T he H N 6 2 4 3 16 is a 16 -M b it CM O S Program m able M ask ROM organized either as 1,048,576 words by 16 bits or as 2,097,152 words by 8 bits. Realizing low power consumption, this

HM-65262C-5

Abstract: c9285
Contextual Info: 4RE » • SôtôMSb DDG1307 SSI ■ H M H S _ _ Ììllll I r T H I MATRA M H S September 1990 "T = - 4 { û - 2 J ï r - C Ô HM 65262 DATASHEET 16 k X 1 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max)

rockwell eprom

Abstract: 1519Q
Contextual Info: R2764 Memory Products 003798 R2764 64K 8K X 8 UV EPROM * Rockwell Preliminary FEATURES DESCRIPTION • 8192 x 8 organization The Rockwell R2764 is a 5V only, 8K x 8 (65,536 bits) ultraviolet (UV) light erasable programmable read-only-memory (EPROM). It is manufactured using n-channel floating gate EPROM tech­

0a0c1

Contextual Info: Features * Single Voltage Operation - 5V Read - 5V Reprogramming * Fast Read Access Tim e - 90 ns * Internal Program Control and Tim er * 8K Bytes Boot Block With Lockout * Fast Erase Cycle Tim e - 1 0 seconds * Byte-By-Byte Programming - 50 ps/Byte * Hardware Data Protection