16KX1 Search Results

Contextual Info: Integrated Device Technology, Inc. BiCMOS StaticRAM 240K 16Kx15-BIT CACHE-TAG RAM For PowerPC and RISC Processors PRELIMINARY IDT71216 This high-speed M A T C H signal, with tADM times as fast as 10ns, provides the fastest possible enabling of secondary

Contextual Info: fax id: 5413 CY7C4255 CY7C4265 3F CYPRESS 8K/16Kx18 Deep Sync FIFOs Features • H ig h-speed , low -pow er, first-in firs t-o u t F IF O m em o ries • 8K x 18 (C Y 7 C 42 55 ) • 16K x 18 (C Y 7 C 42 65 ) • 0.5 m icron C M O S fo r o p tim u m sp ee d /p o w e r

733-ISSI

Contextual Info: 16KX1 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time 15,20,25ns Max. • Low active power- 200mW (Typical) • Low standby power-55mW (Typical) TTL standby -10(iW (Typical) CMOS standby (L-version) • Fully static operation-no clock or refresh required

IMS1400P

Abstract: ims1400p-55 16Kx1 IMS1400 IMS1400S35 IMS1400P35 A10C A12C AA1035 16kx1 static ram
Contextual Info: r - IMS1400 • ■ ■ ■ TM High Performance 16Kx1 Static RAM DDUTIOS FEATURES 35, 45 and 55ns Chip Enable access Maximum active power 660mW Maximum standby power 110mW Single 5 volt ± 10% supply E CE power down function TTL compatible inputs and output

Contextual Info: DPE832V 8K X 32 CMOS EEPROM VERSAPAC D ESC R IPT IO N : The DPE832V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 8KX32, 16KX16 or 32K X 8. The module is built with four low-power CMOS 8K X 8

Contextual Info: 16KX1 BASED Dense-Pac Microsystems, Inc . C M O S SRAM FAM ILY DESCRIPTION: The Dense*Pac 16KX1 Based family consists of fully st atic CMOS random access memories organized as described below. These memories are ideally suited for use in large computers, signal processors or battery backup hand held computers. They

Contextual Info: □PM D PS16616 7 Dense-Pac Microsystems. Inc. 256KX1/128KX2 C M O S SRAM MODULE O NOT RECOMENDED FOR NEW DESIGNS D E SC R IP T IO N : The D P S1 6 6 1 6 7 is a 256K X 1 or 128KX2 bit Static Random Access M em ory SR A M fabricated using sixteen 16KX1 C M O S SRAM s. The memory utilizes

CY7C4255

Abstract: CY7C4265 CY7C42X5 only-10
Contextual Info: fax id: 5413 1CY 7C42 65 CY7C4255 CY7C4265 PRELIMINARY 8K/16Kx18 Deep Sync FIFOs Features are 18 bits wide and are pin/functionally compatible to the CY7C42X5 Synchronous FIFO family. The CY7C4255/65 can be cascaded to increase FIFO depth. Programmable features

Contextual Info: ENERGY METER: Embedded DSP AFE Embedded dspConverters AD73560 AD73560 8/9/01 40 80 2:11 PM AD73360 AD73360 ADSP2185L ADSP2185L 52 52 19 19 16.7 to 26 16.7 to 26 8Kx24 16Kx24 Ed Grokulsky 8Kx16 16Kx16 Rev-4 12/03/00 YES YES YES YES YES YES A A 119 BGA 119 BGA

K4505

Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
Contextual Info: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4

Contextual Info: P4C218 LATCHED HIGH-SPEED 16Kx16 STATIC RAM ADVANCE INFORMATION X FEATURES • Full CMOS Design ■ Power Down Mode When Deselected ■ Supports Processor Speeds to 60MHz ■ 5V ±10% Power Supply ■ On-Chip Address and Chip Enable Latch ■ Output Enable Control

1736d

Contextual Info: P3C218 LATCHED HIGH-SPEED 16Kx16 STATIC RAM ADVANCE INFORMATION À ‘ FEATURES • Single 3.3V +0.3V Power Supply ■ Full CMOS Design ■ Supports Processor Speeds to 60MHz ■ Power Down Mode When Deselected ■ On-Chip Address and Chip Enable Latch ■ Output Enable Control

CY7C4255

Abstract: CY7C4265 CY7C42X5 cy7c4255-15ac
Contextual Info: fax id: 5413 1CY 7C42 65 CY7C4255 CY7C4265 8K/16Kx18 Deep Sync FIFOs Features are 18 bits wide and are pin/functionally compatible to the CY7C42X5 Synchronous FIFO family. The CY7C4255/65 can be cascaded to increase FIFO depth. Programmable features include Almost Full/Almost Empty flags. These FIFOs provide

Contextual Info: In teg rated D evice Technology, Inc. BiCMOS StaticRAM 240K 16Kx15-BIT CACHE-TAG RAM For PowerPC and RISC Processors FEATURES: • 16K x 15 Configuration - 1 2 TAG Bits - 3 Separate I/O Status Bits (Valid, Dirty, Write Through) • Match output uses Valid bit to qualify MATCH output

CY7C

Contextual Info: fax id: 5413 CY7C4255 CY7C4265 8K/16Kx18 Deep Sync FIFOs Featu res • High-speed, low-power, first-in first-out FIFO memories . 8K x 18 (CY7C4255) • 16K x 18 (CY7C4265) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle

s-1311

Contextual Info: C Integrated DeviceTechnology, Inc IDT 7M656L 256K CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • H ig h -d e n sity 2 5 6 K -b it C M O S s ta tic RAM m o du le • C u sto m e r-co n fig u re d to 16Kx16, 32K x8 o r 64Kx4 • Fast a cce ss tim e s T h e ID T7M 656 Is a 256 K -b it h ig h -s p e e d C M O S sta tic RAM c o n ­

Contextual Info: fax id: 5413 CYPRESS CY7C4255 CY7C4265 PRELIMINARY 8K/16Kx18 Deep Sync FIFOs Features H ig h -s p e ed , low -pow er, first-in firs t-o u t F IF O m e m o ries 8 K x 18 (C Y 7 C 42 55 ) 16K x 18 (C Y 7 C 42 65 ) 0.5 m icro n C M O S fo r o p tim u m sp ee d /p o w e r

Contextual Info: fax id: 5425 ST' CY7C4255V PRELIMINARY _ CY7C4265V 8K/16Kx18 Low Voltage Deep Sync FIFOs Functional Description Features • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO

Contextual Info: DPS166167 □PM Dense-Pac Microsystems. Inc. ^ 256KX1/128KX2 CMOS SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS166167 is a 256K X 1 or 128KX2 bit Static Random Access Memory SRAM fabricated using sixteen 16KX1 C M O S SRAMs. The memory utilizes

6116 RAM

Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
Contextual Info: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns

Contextual Info: MDI EDH816H16C25/35/45 High Speed 256K SRAM Module 16Kx16 Static RAM CMOS, High Speed Module Features The EDH816H16C is a 256K bithigh speed CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless chip carriers, mounted on a multilayered ceramic substrate.

s-1311

Abstract: D15C
Contextual Info: 256K CMOS STATIC RAM MODULE ID T 7M 656L FEATURES: DESCRIPTION: • • • The IDT7M656 is a 256K-bit high-speed CMOS static RAM con­ structed on a multilayered ceramic substrate using 16 IDT6167 16Kx1 static RAMs inleadiesschipcarriers. Making 4 chip select

Contextual Info: ^EDI Electronic Designs Inc. ^ — •— ^ «■* ■— i ED128160CED128165C ^ ^ • High Performance Synchronous SRAM 16Kx16 Monolithic High Speed Synchronous Static RAM Features The EDI2816XC is a 262,144 bit synchronous static RAM organized as 16Kx16, with advanced peripheral

Contextual Info: EDI816H16C 2 5 / 35/45 ^ E D Module I Th e fu tu re . . . today. 16Kx16 SRAM CMOS, High Speed Module The EDI816H16C is a 256K bit High Speed, CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless Chip Carriers, mounted on a multilayered ceramic substrate.