M047AE Search Results

AS8S512K3

Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface

Contextual Info: EDI8L3265C White Electronic Designs T NO 64Kx32 CMOS High Speed Static RAM DESCRIPTION FEATURES The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array.  64Kx32 bit CMOS Static  Random Access Memory Array

8l32128c

Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
Contextual Info: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

Contextual Info: EDI8LM32513V-RP 512Kx32 SRAM Ruggedized Plastic 512Kx32 CMOS High Speed Static RAM Features 512Kx32 CMOS Static RAM The EDI8LM32513V is a high-speed 16-Megabit static • Fast Access Times: 1 2 ,1 5 and 20ns • Individual Byte Enables Commercial, Industrial and Military temperature range.

EDI8L32512V-AC

Abstract: 8L32512V
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

Contextual Info: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: W Dl E0I8L32512C 512Kx3! SRAM Module E lE O R O iC CC96N& M C ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

dq08

Abstract: DSP96002 EDI8L24128C EDI8L32256C EDI8L32512C TMS320C32 PLCC weight 8l321
Contextual Info: EDI8L32512C White Electronic Designs 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION n DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns

AS8SLC512K32PECA

Abstract: 64Mb-SRAM MO-47AE AS8S512K32PEC
Contextual Info: iPEM 16 Mb ASYNC SRAM AS8SLC512K32PECA 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

64MB SRAM

Abstract: MO-47
Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PEC THIS PRODUCT IS SUBJECT TO MICROSS PCN-1109 AND REPLACED BY AS8S512K32PECA. 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit DESCRIPTION FEATURES The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The

AS8S512K32PEC

Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

Contextual Info: EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory solution. The high speed, 5v supply

Contextual Info: EDI8LM32513C-RP ^ E D I 512Kx32 SRAM Ruggedized Plastic ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features 512Kx32 CMOS Static RAM The EDI8LM32513C is a high-speed 16-Megabit static Fast Access Times: 12,15 and 20ns RAM device with access times of 12,15 and 20ns over the

PLCC weight

Abstract: DSP96002 EDI8L32512C DQ06 4 DQ04
Contextual Info: EDI8L32512C T NO 512K x 32 CMOS High Speed Static RAM DESCRIPTION n DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x n Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

EDI8L32512V

Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

ADSP2106XL

Contextual Info: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,

EDI8L32512C

Abstract: EDI8L32512C25AC
Contextual Info: EDI8L32512C ^ E D l S12Kx32 SRAM Module ELECTRONIC MSIGNS. NC. ADVANCED INFORMATION 512Kx32 CMOS High Speed Static RAM Features The EDI8L32512C is a high speed, high performance, four megabit density Static RAM organized as a 512Kx32 bit 512Kx32 bit CMOS Static

JEDECMO-47AE

Contextual Info: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution • ADSP-21060L SHARC • ADSP-21062L (SHARC) • TMS320LC31 The ED I8L32512V is a high speed, 3.3V, 16 m egabit SRAM . The device is available w ith access tim es of 12,

5630x

Contextual Info: EDI8L24512V 512Kx24 SRAM Module Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static DSP Memory Solution • Motorola DSP 5630x • Analog Devices SHARCTM Random Access Memory Array • Fast Access Times: 12, 15, 17, and 20ns The EDI8L24512V is a high speed, 3.3V, 12 megabit

Contextual Info: iPEM 16 Mb ASYNC SRAM AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

Contextual Info: iPEM 16 MB ASYNC SRAM AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables

AS8SLC512K32

Contextual Info: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION „ The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20