1N627
Abstract: la 4450 1N459a LL4148 LL4149 LL4150 LL4151 LL4152 LL4154 LL4446
Contextual Info: SW ITC H IN G DIO DES, SU RFA CE MOUNT, MELF PACKAGE Peak Power IS I P a rt Num ber LL4148 LL4149 LL415Q LL4151 LL4152 U 4153 LL4154 LL4446 LL4447 LL4448 L.L4449 L 1.4450 LL4451 LL4453 LL4454 Re er e D iss ip a tio n Voltage P„ I*» V,M VòltS) M a x im u m
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ll4148ll4149ll4150ll4151+9ll4152u4153ll4154ll4446ll4447ll44481n627la 44501n459a
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tr 1892
Abstract: PMLL4448 PMLL4148 PMLL4446
Contextual Info: • bhS3131 N AMER DÜSS'ilB PMLL4148 PM LL4446 P M L L 4448 32fl H A P X PHILIPS/DISCRETE fa?E D HIGH-SPEED SILICON DIODES FOR SURFACE MOUNTING These d io d e s are p r im a r ily designed fo r fa st logic a p p lic a tio n s . These SM d io d e s are lead less d io d e s in a h e rm e tic a lly sealed S O D 8 OC e n ve lo p e w ith tm -p la te d m e ta l
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bhs3131pmll4148pmll4446pmll4448+1tr 1892
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DIODE ED 34
Abstract: 1N4446 1N4446M LL4446
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4446 1N4446M LL4446 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n
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1n44461n4446mll4446ll-34+2100padiode ed 34
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diode 2U 88
Abstract: 1N4446 150D LL4446 2u 45 diode 2U DIODE ITT G 91 35
Contextual Info: ITT SEMICON] / INTERMETALL blE D • MbflB711 DDDBlbM 117 M I S I LL4446 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4446 •Cathode Mark - 3 .5 ± 0.1
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mbflb711ll44461n4446hbfls711+6q0031b7diode 2u 88150d2u 45 diode2u diodeitt g 91 35
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Contextual Info: 4684955 a? I T T SEMICONDUCTORS 87D 02327 »e 1m^a^ss 0DDS3a? t J~ D r . o9 SILICON DIODES General Purpose and Switching Diodes in MiniMELF Package Type Peak Inv. Voltage PIV M ax. Aver. Rectified Current lo Pow er Junction Dissipation Tem peraat 25 °C ture T,
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ll4148ll4149ll4150ll4151+6ll4152ll4153ll4154ll4446ll4447ll4448
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TCA700Y equivalent
Abstract: SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25
Contextual Info: Pages Contents 2 and 3 List of Types 4 to 7 DIGIT2000 Digital TV System 8 to 21 ICs for TV and Radio Receivers 22 ICs for Telephone Applications 23 ICs for Electronic Clocks 24 and 25 ICs for Automobile Applications 26 ICs for other Applications 27 Voltage Stabilizers
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digit2000237thyu-61000tca700y equivalent+9saj300rsaf1092sak215n525by133tca700yitt zener diode zpditt intermetallbc327-25
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ph 4148
Abstract: f494 ph+4148+zener+diode PXTA14 BC546 SMD SMD BC547 BC327/BC517 BC327-40 SMD BST74 BFG 71
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Conversion List CONVERSION LIST FROM LEADED TO SMD TYPE LEADED SMD LEADED SMD B A 2 43 BA T18 BA W 62 BAW 56 B A 3 14 B A S 17 BA W 62 BAW 56W B A 4 80 BA T17 B A X 12 BAS29 BA481 BA T17 B A X 12 BA S31
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bas29ba481bby31bat81+16bas81bby40bc847bat54bc847abt2907ph 4148f494ph+4148+zener+diodepxta14bc546 smdsmd bc547bc327/bc517bc327-40 smdbst74bfg 71
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BAQ33
Abstract: BAQ34 BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4150 LL4151
Contextual Info: Surface Mount Fast / Ultra Fast Bridge Rectifiers Part No. CrossReference RMB2S RMB4S RMB6S - EDF1AS EDF1BS EDF1CS EDF1DS - Max. Avg. Rectified Current Peak Inverse Voltage Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25oC @ Rated Io
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-65oc175ockds160ebaq33+9baq34baq35bav100bav101bav102bav103ll4148ll4150ll4151
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A2 diode
Abstract: 1N414S
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G
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00q13qdo-351n9141n414s+71n41491n41501n41511n41521n41531n4154a2 diode
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1n4148 ITT
Abstract: 1N914 ITT 1N914/1N4148 1n4448 itt 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - - - — - - : G en era l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a ck a ge Type Peak Inv. Voltage PIV Max. Aver. Rectified Current lo Power
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do-351n914lf-10marl-100+101n41481n41491n41501n4148 itt1n914 itt1n914/1n41481n4448 itt1n41511n41521n4153
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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lcd01television eht transformersbyw96e phsmd code z9p+7germanium transistorby527equivalent byd33dbax12bb212bb515bby31
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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q9001-1994icmsh1-20mlpnp transistor smd ba rntransistor marking code 12w sot-23+8smd transistor marking p69transistor smd marking code s2atransistor smd bc rntransistor smd marking code bc ru1ff transistor smd marking codesmd transistor p2dmotorola transistor smd marking codessmd transistor marking p28
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