LL4447 Search Results
LL4447 Datasheets (6)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LL4447 | International Semiconductor | SWITCHING DIODE | Scan | 124.71KB | 1 | ||
| LL4447 |
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General Purpose and Switching Diodes | Scan | 61.36KB | 1 | ||
| LL4447 | Micronas Semiconductor | Silicon Diodes | Scan | 27.39KB | 1 | ||
| LL4447 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 33.08KB | 1 | ||
| LL4447 | SynSemi Semiconductor | Scan | 134.87KB | 1 | |||
LL4447
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SUNMATE electronic Co., LTD | Silicon epitaxial planar diode in SOD-80 package, featuring 75 V peak reverse voltage, 150 mA max average rectified current, 400 mW power dissipation, and fast switching speed with low forward voltage drop.Silicon epitaxial planar diode in SOD-80 package, featuring peak reverse voltage from 30 to 100 V, average rectified current up to 150 mA, and low forward voltage drop, suitable for high-speed switching applications.Silicon epitaxial planar diode in SOD-80 package, featuring 75V peak reverse voltage, 150mA average rectified current, 400mW maximum power dissipation, and fast switching speed with max 4.0ns reverse recovery time.Silicon epitaxial planar diode in SOD-80 package, featuring peak reverse voltage from 30 to 100 V, maximum average rectified current up to 150 mA, and low forward voltage drop down to 0.5 V, designed for high-speed switching applications. | Original |