1N627
Abstract: la 4450 1N459a LL4148 LL4149 LL4150 LL4151 LL4152 LL4154 LL4446
Contextual Info: SW ITC H IN G DIO DES, SU RFA CE MOUNT, MELF PACKAGE Peak Power IS I P a rt Num ber LL4148 LL4149 LL415Q LL4151 LL4152 U 4153 LL4154 LL4446 LL4447 LL4448 L.L4449 L 1.4450 LL4451 LL4453 LL4454 Re er e D iss ip a tio n Voltage P„ I*» V,M VòltS) M a x im u m
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Contextual Info: LL4152 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current150m V(RRM)(V) Rep.Pk.Rev. Voltage40 t(rr) Max.(s) Rev.Rec. Time2n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)1.0m V(FM) Max.(V) Forward Voltage.55 @I(FM) (A) (Test Condition)100u
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1N4152
Abstract: 1N4152M LL4152
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4152 1N4152M LL4152 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n
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Contextual Info: 4684955 a? I T T SEMICONDUCTORS 87D 02327 »e 1m^a^ss 0DDS3a? t J~ D r . o9 SILICON DIODES General Purpose and Switching Diodes in MiniMELF Package Type Peak Inv. Voltage PIV M ax. Aver. Rectified Current lo Pow er Junction Dissipation Tem peraat 25 °C ture T,
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ll4148ll4149ll4150ll4151+6ll4152ll4153ll4154ll4446ll4447ll4448
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LL914
Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454
Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. LL-34 Cathode band Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current
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LL4149
Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV
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LL4149
Abstract: LL4150 LL4152 LL4153 LL4447 LL4449 LL4450 LL4451 LL4453 LL4454
Contextual Info: ITT S E M I C O N D / INTERMETALL b lE » • 4bfl2711 0003172 2^3 m i S l Silicon Diodes Silicon Diodes for general purpose and switching Cathode Mark h - 3.5*01-» / - These diodes are identical electrically to the corresponding JEDEC 1N . . . types.
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LL4149
Abstract: LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV
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ll914ll4454ll-34ll4149+7ll4151ll4152ll4453ll4153ll4154ll4447ll4449
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TCA700Y equivalent
Abstract: SAJ300R SAF1092 SAK215 n525 by133 tca700y itt zener diode zpd ITT INTERMETALL BC327-25
Contextual Info: Pages Contents 2 and 3 List of Types 4 to 7 DIGIT2000 Digital TV System 8 to 21 ICs for TV and Radio Receivers 22 ICs for Telephone Applications 23 ICs for Electronic Clocks 24 and 25 ICs for Automobile Applications 26 ICs for other Applications 27 Voltage Stabilizers
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digit2000237thyu-61000tca700y equivalent+9saj300rsaf1092sak215n525by133tca700yitt zener diode zpditt intermetallbc327-25
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diodes ir
Abstract: LL4149 LL4151 LL4152 LL4153 LL4154 LL4447 LL4449 LL4454 LL914
Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV
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ll914ll4454ll-34ll4149+9ll4151ll4152max30ll4453diodes irll4153ll4154ll4447ll4449
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BAQ33
Abstract: BAQ34 BAQ35 BAV100 BAV101 BAV102 BAV103 LL4148 LL4150 LL4151
Contextual Info: Surface Mount Fast / Ultra Fast Bridge Rectifiers Part No. CrossReference RMB2S RMB4S RMB6S - EDF1AS EDF1BS EDF1CS EDF1DS - Max. Avg. Rectified Current Peak Inverse Voltage Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25oC @ Rated Io
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-65oc175ockds160ebaq33+9baq34baq35bav100bav101bav102bav103ll4148ll4150ll4151
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A2 diode
Abstract: 1N414S
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G
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00q13qdo-351n9141n414s+71n41491n41501n41511n41521n41531n4154a2 diode
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1n4148 ITT
Abstract: 1N914 ITT 1N914/1N4148 1n4448 itt 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - - - — - - : G en era l P u r p o s e a n d S w it c h in g D io d e s in D O -3 5 P a ck a ge Type Peak Inv. Voltage PIV Max. Aver. Rectified Current lo Power
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LL4149
Contextual Info: LL914.LL4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching. Peak reverse Type voltage Max. aver. rectified current Max. power dissip. o LL-34 Max. Max. junction forward temper- voltage at 25 C ature Ptot mW o drop Max. current at VRMV
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