L42 TRANSISTOR Search Results

transistor L42

Abstract: FD-L42 p76 npn transistor FX-D1P FX-A1P 2mm wafer cable l42 transistor CK100 transistor FD-L41 TRANSISTOR D2102
Contextual Info: Glass Sheet Specular Object Detection Fiber SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS FD-L41/L42 GD CK-100 Die Stroke Counting Metal-sheet Double-feed Detection M Reliable Glass Sheet/ Wafer Detection by Excellent Fixed-focus Reflection

DS-L10H

Abstract: DS-L24H DS-L10 AP3822K RELAY SOCKET DIAGRAM CK-100 SH-72 DIODE MSDS CK100 transistor DIAGRAM ck100 transistor npn silicon ck100
Contextual Info: SERIES Wafer Detection Sensor SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS DS GD Optimum for Wafer Detection Reliable Fixed-focus Sensing A Variety of Objects The sensor can reliably detect wafers irrespective of their glossiness or color.

CK100 transistor

Abstract: CK100 transistor DIAGRAM TP514S1 matsushita pnp transistor L42 MATSUSHITA SU SERIES SS TRANSISTOR RELAY 24V FUJI SH72533 Acceleration Sensors for 30G Acceleration
Contextual Info: Glass Sheet Detection Sensor SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS SH-72 GD CK-100 Die Stroke Counting Metal-sheet Double-feed Detection M Optimum Sensing Capability for LCD Manufacturing Reliable Detection of Glass Sheets

smd transistor l42

Abstract: smd zener diode color code smd zener color codes sensor using 555 timer smd transistor GD smd zener diode code M1 5 pin 12V din wiring diagram metal detector using 555 timer M8 Lock Washer, Stainless Steel smd zener code 22
Contextual Info: SERIES Metal-sheet Double-feed Detector SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS GD GD Double Metal Sheets Reliably Detected Easy Sensitivity Setting with Actual Samples The high-end GD sensing technology reliably detects double feeds of any

CK100 transistor DIAGRAM

Abstract: CK100 transistor Temperature sensor using plc zener wafer HIF3ba connector M-826 CK-100 DC-12 DC-13 EN50081-2
Contextual Info: SERIES Wafer Address Sensor SH-72 DS FD-L41/L42 Glass Sheet / Wafer Sensing PARTICULAR USE SENSORS M Simultaneous Sensing of Wafers in a Cassette Marked Compact Size 14mm 2mm Simultaneous Sensing Sensor Check Possible All the wafers in the cassette can be

Contextual Info: KSC2787 NPN EPITAXIAL SILICON TRANSISTOR FM/AM RF AMP, MIX, CONV, OSC, IF • Coliector-Base Voltage Vc*o= 30V • High Currant Gain Bandwldth Product fT-300M Hz iyp • Low Collector Capacitane* Cob: 2.0PF flyp) ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic

transistor 2TH

Contextual Info: KSC838 NPN EPITAXIAL SILICON TRANSISTOR FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product fT-250MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO VcEO VeOO lc Pc Tj Tstg 35 30 4 30 250 150 -5 5 -1 5 0

L42 marking transistor

Contextual Info: KSR2108 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching Circuii, Inverter, interface circuit Driver circuit • Built in bias Resistor (^ = 4 7 X 0 , Rj=22Ki!) • Com plement to KSR1108 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 2N3905/3906 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ceo =40V • C o llector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

orega transformer SMT4

Abstract: MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer MC44603 E-4215A orega transformer OREGA smt4 SMT4 former
Contextual Info: MOTOROLA Order this document by AN1669/D SEMICONDUCTOR APPLICATION NOTE AN1669 MC44603 in a 110 W Output SMPS Application 80-140 Vrms and 180-280 Vrms Mains Voltages by Joël Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France

power BJT DARLINGTON PAIR NPN

Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
Contextual Info: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V

s1854

Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Contextual Info: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #

marking l33

Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor
Contextual Info: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features

l35 CAPacitor

Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices
Contextual Info: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features

flyback transformer construction

Abstract: THOMSON B2 ferrite material MOSFET IRF 540 AS A SWITCH AN4001 orega transformer SMT4 E-4215A Thomson capacitors lcc 28V to 110V transformer c4460 MC44603
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document as AN4001/D A N 4 0 0 1 /D MC44603 in a 110W output SMPS application 80-140Vrms and 180-280Vrms mains voltages by Joel Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France

NK60Z

Abstract: 2907 TRANSISTOR PNP TRANSISTOR REPLACEMENT ECG transistor P43 smd transistor P45 smd transistor SMD p81 smd diode H05 smd transistor l42 N50C3 2222A SMD
Contextual Info: DN-H05 Design Note 56W Off-line, 120VAC with PFC, 160V, 350mA Load, Dimmer Switch Compatible LED Driver Specifications AC line voltage 100 - 135 VAC LED string voltage 20 – 160V LED current 350mA Switching frequency 63kHz - @ VOUT = 160VDC 92kHz - @ VOUT = 20VDC

MC44603P

Abstract: THOMSON B2 ferrite material orega transformer SMT4 flyback transformer construction ferrite thomson lcc orega flyback transformer mc44603 orega flyback transformers OREGA smt4 MTP6N60E equivalent
Contextual Info: AN1669/D MC44603 in a 110 W Output SMPS Application 80-140 Vrms and 180-280 Vrms Mains Voltages Prepared by: Joël Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France INTRODUCTION September, 2000 − Rev. 0 APPLICATION NOTE

Contextual Info: s c s -th o m s o im r r : * 7 M , l f i s i M » IL IÊ ÏT M D S L F 2 5 1 - L F 3 5 1 W IDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS LOW POWER CONSUMPTION WIDE COMMON-MODE (UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT

SMD Transistor t08

Abstract: transistor SMD t07 transistor NPN C124 transistor SMD t06 transistor L43 SMD transistor SMD t08 transistor SMD t06 47 SMD TRANSISTOR l38 transistor NPN c115 transistor SMD t06 19
Contextual Info: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 25 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.

transistor L43 SMD

Abstract: transistor NPN C124 samsung u2 cable smd diode L43 c124 npn transistor SMD t06 47 transistor SMD t08 transistor SMD t07 transistor t07 DIODE C136
Contextual Info: This Document can not be used without Samsung’s authorization. 6 Docking Exploded View and Parts List 6-1 UNIT_DOCK_BOTTOM_ASSY Sens Q 20 6-1 6 Docking Exploded View and Parts List NO 6-2 PART NAME This Document can not be used without Samsung’s authorization.

UD1001

Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

4w-2w hybrid

Abstract: L4D* transistor TS544-A874 MB4752A 440J2
Contextual Info: TS544-A874 April 1987 MB4752A F U J IT S U J~ SUBSCRIBER LINE INTERFACE IC " The Fujitsu MB4752A is designed for PBX Private Branch Exchange , it has battery feed, supervision and 4-wire to 2-wire conversion functions. Battery Feed mode can be established to 200ftx 2, 440ft x 2 constant feeding resistor,

transistor A431

Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12

transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I