MA3232
Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bvcbo-100vbvce0-80vbvebo-15vbvcbo-60v+13bvceo-40vbvcb0-80vbvce0-60vbvcb0-100vma3232bf123ca3036ft40172n1613 replacementa431bf121diode sj 98dm01b
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transistor k1502
Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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npn110bvcb0-80vbvce0-60vbvebo-15v+15bvcbo-100vbvceo-80vbveb0-15vbvcb0-60vbvce0-40vtransistor k1502dr 25 germanium diodediode 10n 40d2n3379ca3036k1502k15012n5513darlington 12v 6.2ap1029
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DIODE SJ 98
Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bvcb0-80vbvce0-60vbvebo-15vbvcbo-100v+15bvceo-80vbveb0-15vbvcb0-60vbvce0-40vmhm2101diode sj 98ca3036silicon epitaxial mesa diode microwave switchv405tdarlington 3a 100v npn array2n1613 replacementa431mt726mt869mt995
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A1381 transistor
Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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npn110bvcb0-80vbvce0-60vbvebo-15v+15bvcbo-100vbvceo-80vbveb0-15vbvcb0-60vbvce0-40va1381 transistor2n5036ca3036nf amp npn silicon transistor to-3ma323220c262n5034 package2n5035l29a2n5034
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NS1000 n
Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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bvcb0-80vbvce0-60vbvebo-15vbvcbo-100v+15bvceo-80vbveb0-15vbvcb0-60vbvce0-40vmhm2101ns1000 nca3036bvceo-90v2cy38transistor a4312n1613 replacementa431ud1001ns1862qd401-78
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UD1001
Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I
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npn110bvcb0-80vbvce0-60vbvebo-15v+15bvcbo-100vbvceo-80vbveb0-15vbvcb0-60vbvce0-40vud1001ft4017transistor a431ma3232ca3036uc850dm01bdm02buc340l0na
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