L14B Search Results

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

MA3232

Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor a640

Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

photo transistor L14F

Abstract: photo transistor 2n5777 2N5779 L1402 L14F 2N5780 L14A502 L14f photo transistor L14B1 photo transistor L14e2
Contextual Info: OPTO ELECTRONICS DETECTORS— PHOTOTRANSISTORS Photo Current @ H = Tungsten 2mW/cm2 @ 2870° K II Min. mA JEDEC No. GE Type: Rise 8, Fall Times Typical Photo Current GaAs Source II Mat. (mA) II Min. (mA) II Max. (mA) V e to tf U se e) Min. Package Outline

AVX tantalum marking

Abstract: capacitor 107a 107A CAPACITOR avx date code marking code avx label avx taj 107A a107a marking 107A date code capacitor
Contextual Info: Tantalum Division Product Update Change of LOT CODE format Introduction AVX is intending to modify the lot code format marked on each physical capacitor where size allows as well as on reel labels in order to maintain and strengthen batch identification and traceability. The original format has not provided an adequate variety of

cq 721

Abstract: am26ls31 27LS00 TRANSISTOR SUBSTITUTION Amdasm am2911pc 25S558 STK 025 power amplifier GE semiconductor data handbook am29811adc-b
Contextual Info: í i í i í i n z ta a a a a a a a a a a a r n a a a a a a a a a a a a a i: 33a a a a a a n a a a a a ; a a a a a a a a n a a iia a r r ia a a a a a n a a iia a a r l a n g a s í i í i í i * i¿ w n r w a s a jn sü n n a n a n n n n íiíi íiíiíi n n s n n n

transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

D2096

Abstract: AM450 A06M1 R195P 1N150 L165 ST immo off R205P 2DBS N5605
Contextual Info: m m :T % íi:v, V g g n “t a V i l s. « ÌK I « "K* II Ì a3 > > > > 5 'X '%, § sjr- % 5 "% s . c ^ 'o S ß « á W " ^ 1 O» KK i« C O ”¿ f >o « •tti AJ £ ? * 1 X % o 0* « « « P IF,> * % Ï 3 _ > 5 o < fe£ <* * r % m O *> \o o VI _> E W

L14B

Contextual Info: SONY CXK78V4861AQ-33 FEATURES DESCRIPTION •Single Chip Cache Subsystem for 486 CPU The SONY Cache-1 CV is a single chip cache subsystem designed to work with the 486 micro­ processor. This device is designed utilizing SONY’S proprietary Memory-intensive ASIC

DIODE SJ 98

Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA OR2CxxA 5.0 V and OR2TxxA (3.3 V) Series Series Field-Programmable Gate Arrays Features 2 • Flip-flop/latch options to allow programmable prior­ ity of synchronous set/reset vs. clock enable

Contextual Info: Y A M A H A 'L S I Y T M 411B MD9624LV FAX/DATA/VOICE MODEM LSI • OUTLINE The YTM411B is a one-chip MODEM LSI applicable to both the FAX MODEM and Data MODEM and requires low power as it can be operated with a power supply in the range: 3.3 ~ 5V. The YTM411B is an upper-level chip of VAMAHA’s FAX/DATA MODEM LSI YTM403C and has

transistor A431

Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12

SI345P

Abstract: D28C3 250u5 D16P2 transistor 75U5 0 a darlington pair photo transistor L14B3 BDX66L D12X012 D28C8
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised S p ecificatio ns # N o n-JE D E C ty p e m a n u fa ctu re d outsid e u :s . a . t S w itc h in g ty p e , also lis te d in S e c tio n 12

74LS189 equivalent

Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Contextual Info: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.

A1381 transistor

Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

Contextual Info: m / H B Œ PM 600H SA120 X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 In tG llilT IO C i M o d i/ iS Half Phase IGBT Inverter Output 600 Amperes/1200 Volts Description: Powerex Intellimod™ Intelligent Power Modules are isolated base

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

UD1001

Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

sony motherboard diagram

Contextual Info: SONY CXK78V4861BQ-33/40 FEATURES DESCRIPTION • Single Chip Cache Subsystem for 486-class microprocessors The SO NY Cache-1 M is a single chip cache sub­ system designed to work with various 486-class microprocessors. The SO NY Cache-1 M is designed specifically for mobile computing appli­