EM500 Search Results

B88069X2780S102

Abstract: EM500X EM500 em epcos B88069X278 B88069X2780
Contextual Info: Surge Arrester 2-Electrode-Arrester EM500X Ordering code: B88069X2780S102 DC spark-over voltage 1 2) 500 ± 20 V % < 950 < 800 V V < 1050 < 900 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 2.5 5 kA

EM500XG

Contextual Info: Surge Arrester 2-Electrode-Arrester EM500XG Ordering code: B88069X2810T502 Preliminary data DC spark-over voltage 1 2) 500 ± 20 V % < 950 < 800 V V < 1050 < 900 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs)

Contextual Info: Surge Arrester 2-Electrode-Arrester EM500X Ordering code: T. B. D. Preliminary data DC spark-over voltage 1 2) 500 ± 30 V % < 950 < 800 V V < 1050 < 900 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs)

EM500

Abstract: B88069X2810T502 EM500XG
Contextual Info: Surge Arrester 2-Electrode-Arrester EM500XG Ordering code: B88069X2810T502 DC spark-over voltage 1 2) 500 ± 20 V % < 950 < 800 V V < 1050 < 900 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 2.5 5 kA

MA3232

Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor a640

Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

12FL

Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER : DESCRIPTION : DC BRUSHLESS FAN DIMENSIONS : 50X50X15 mm MODEL : GM1205PHV2-A APPROVED NO : APPROVED BY : AUTHORIZED DAWN. Yuchen 2/11 CHKD. APPD. SPEC.NO M500065 ISSUE DATE 02.11.2000 EDITION REVISE DATE E.SPEC

Transistor mps 2112

Abstract: MPS 2112 UZU2122 nais uzu2202 UZU2202 nais sensor UZU20205 druck EN50032-2 UZU2001
Contextual Info: Drucksensoren mit hoher Funktionalität und digitaler LED Anzeige I I K JC m W v l 143k IW EINE NEUE GENERATION MULTIFUNKTIONALER HOCHPRÄZISER MIKROPROZESSORGESTEUERTER DIGITALMANOMETER Hohe Wiederholgenauig keit und Auflösung bei kurzen Ansprechzeiten Kurze Ansprechzeit; unter 2,5ms

transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

Black Star

Abstract: EN50081-1 Nova200
Contextual Info: The Nova series of counter-timers SPECIFICATION Nova 200 Frequency range Timebase Time between measurements Crystal frequency Setability Temperature stability Aging Nova 200X 10Hz - 200MHz 2 ranges Nova 2400 10Hz - 2.4GHz (3 ranges) 200m sec. 10MHz < 0.2ppm

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

U501D

Abstract: 74HC4066 EL17-21SYGC U501B EM501 U501C U500A EM500 C5021 V3P3
Contextual Info: 1 2 3 4 5 6 8 7 14 V3P3 U500E RID/NTC BIAS VCC 74HC4066 L500 2 1 V3P3 BLM21AG102SN1D GND 1 C501 2 GND 100N_16V_X7R V_BAT_- V_BAT_V3P3 D502 10MQ060 2 1 4 U500A 74HC4066 1 RID/NTC 2 J500 1 3 BATTERY + 2 5 BATTERY - RID_NTC_A 4 SDA_1_WIRE_A 3 SCL_A 2 BATTERY_A_EN

DIODE SJ 98

Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor A431

Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12

A1381 transistor

Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

Sunon gm1205phvx-a

Abstract: GM1205PHVX-A 12FL EM500
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER : DESCRIPTION : DC BRUSHLESS FAN DIMENSIONS : 50X50X15 mm MODEL : GM1205PHVX-A APPROVED NO : APPROVED BY : AUTHORIZED DAWN. Yuchen 2/11 CHKD. APPD. SPEC.NO M500068 ISSUE DATE 02.11.2000 EDITION REVISE DATE E.SPEC

C 547 C

Abstract: sener2 BSS8 Q 536 C557C RY 228 U504 29 C 548 c EM503 samsung s6
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 10. Part list 1 Internal System SE C C ode N ame B1 L oc ation 330 1-001 162 bead_c ore, BE A D -SM D ;6 8 ohm,3 .2 x1 .6 x0 .9 mm,3 0 0 0 mA ,T P ,0 .0 1 2 ohm, power

NS1000 n

Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

UD1001

Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2sa525

Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

EM500L00202AB

Abstract: EM500L00102AA PTC conversion table EM500 Intel Order
Contextual Info: Product Change Notification PCN #: 956, Revision 1 Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.

82443BX Northbridge

Abstract: pin diagram for core i3 processor pin diagram i3 processor block diagram of pentium PROCESSOR EM500 PENTIUM PROCESSOR MOBILE MODULE 82371AB 82371EB 82443BX PIIX4E
Contextual Info: Pentium III Processor – Low-Power Module Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ ■ Mobile Pentium® III processor at 500 MHz On-die, primary 16-Kbyte Instruction cache and 16-Kbyte Write Back Data cache On-die, 256-Kbyte L2 cache — Eight-way set associative

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

molectron

Abstract: Molectron Detector joulemeter 36643 QD41 molectron power max EM500 molectron p5-01
Contextual Info: NE ! W JOULE MAX11 High Damage Threshold Pyroelectric Joulemeter Probe Features n n n n n n n n n n Damage Threshold: 300 mJ/cm2 at 1.06 µm 11 mm Diameter Sensor Area Broad Spectral Response: 0.1 to 1.1 µm Sensitive Range: 0.1 mJ to 300 mJ Rep Rate: 1 to 50 pps