BSS8 Search Results

bss84 spice

Abstract: transistor k84 marking code 27a ds30149 BSS84-7-F BSS84 MARKING CODE BSS84 K84 MARKING 2N7002 J-STD-020A
Contextual Info: BSS84 SPICE MODEL: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version A B

BSS83

Abstract: MDA250 Mosfet n-channel BSS83-N
Contextual Info: BSS83 MOSFET N-channel enhancement switching transistor Rev. 03 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

transistor k84

Abstract: marking code 27a BSS84W J-STD-020A 025-BB
Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: BSS84W Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Also Available in Lead Free Version D B C Mechanical Data · · ·

bss84

Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking

BSS84LT1

Contextual Info: BSS84LT1 Preferred Device Power MOSFET 130 mAmps, 50 Volts P–Channel SOT–23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load

Contextual Info: Product specification BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: SMD Type SMD Type Product specification BSS79,BSS81 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low collector-emitter saturation voltage. 1 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

Contextual Info: SMD Type SMD Type Transistors IC Product specification BSS80,BSS82 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low collector-emitter saturation voltage. 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1

BSS84DWQ-7

Contextual Info: BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead Free/RoHS Compliant Note 1 "Green" Device (Notes 2 and 3)

SS80B

Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 - SEPTEMBER 95 Q_ P A R T M A R K IN G D E TA ILS - B S S 82B - CL B SS82C - CM BSS82B BSS82C ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL VALUE U N IT V CBO -60 V V CEO -60 V C o lle c to r-B a s e V o lta g e

diode RA 225 R

Contextual Info: MOTOROLA Order this document by BSS84LT1/D SEMICONDUCTOR TECHNICAL DATA 6 P t. N ml • !V i: BSS84LT1 Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single P-Channel Field Effect Transistors ~ M r W TMOS ’ P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Diode U160

Contextual Info: MOTOROLA Order this document by BSS84LT1/D SEMICONDUCTOR TECHNICAL DATA L i n e Green BSS84LT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Motorola Preferred Device P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET 3 DRAIN CASE 318-08, Style 21

Contextual Info: BSS83 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)10 V(BR)GSS (V) I(D) Max. (A)50m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)230m Minimum Operating Temp (øC)

b84 diode

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.

TRANSISTOR SMD MARKING CODE dk

Abstract: TRANSISTOR SMD MARKING CODE A1 BSS84 TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD CODE 339
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS84 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18 Philips Semiconductors Product specification P-channel enhancement mode

Contextual Info: • ^53^31 QD2Sbn T3T H A P X N AUER PHILIPS/DISCRETE BSS87 b7E ]> J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other

Contextual Info: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device

transistor scans sheet

Abstract: BSS89 B3 transistor
Contextual Info: V> EL J I BSS89 m ^53*124 ÜD7ÛÛ25 4ÖM I SIC3 NAPC/PHILIPS SEMICOND FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 O R DATA SH EET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as

Silicon P-Channel Junction FET sot23

Abstract: DMOSFET p-channel P-Channel Enhancement FET uma* philips p-channel mos sot23 vertical mosfet BSS84 DMOSFET pchannel
Contextual Info: • Philips Semiconductors Data sheet status Product specification date of issue July 1993 ttS3"131 DDSBSIA BSS84 N AMER P H I L I P S / D I S C R E T E Silicon p-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. It is intended for use In general purpose and high­

BSS81C

Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E

BSS84

Abstract: BSS84 MARKING CODE BSS84 marking code SOT-23 marking code 84L SOT-23
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage

BSS84-7-F

Abstract: p-channel SOT-23 K84 BSS84 MARKING CODE bss84 spice marking code 27a BSS84 BSS84 marking code SOT-23 transistor k84
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

con20A

Abstract: 100nF 63V 1 con8a CON2 connector BSH103 74VHC125 CON34A R65C29 1SMB5915B L5972D
Contextual Info: 5 4 3 2 1 +3.3V +3.3V D3 STPS160A C18 220pF C14 22nF 63V CERAMIC 63V CERAMIC +5V BP_EN1 G R21 47K S P1.1 R23 100K J61 USB connector +5V Don't use P1.5 USB_PU 1 P1.3_O P0.15I DSS Q1 BSS84 Don't use Don't use Don't use PWM2 PWM3 2 R20 10K J5 1 3 5 7 9 11 13

transistor k84

Abstract: k84 transistor K84 MARKING marking K84
Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Also Available in Lead Free Version SOT-323 · · · · · Dim Min Max D A 0.25 0.40 B